QH8KA2
30V Nch+Nch Power MOSFET
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Outline
TSMT8
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
35mΩ
±4.5A
1.5W
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Features
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
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Inner circuit
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
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Application
Type
Switching
Motor Drive
Embossed
Tape
180
8
3000
TR
KA2
Unit
V
A
A
V
mJ
A
W
℃
℃
Taping code
Marking
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Absolute maximum ratings
(T
a
= 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D
I
D, pulse*1
V
GSS
E
AS*2
I
AS*2
P
D*3
T
j
T
stg
Value
30
±4.5
±12
±20
1.5
4.5
1.5
150
-55 to +150
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© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140806 - Rev.002
QH8KA2
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
Symbol
R
thJA*3
Values
Min.
-
Typ.
83.3
Max.
-
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Transconductance
Symbol
Conditions
Values
Min.
30
-
-
-
1.0
-
-
-
1.4
Typ.
-
21
-
-
-
-3
25
40
-
Max.
-
-
1
±100
2.5
-
35
56
-
Unit
V
mV/
℃
μA
nA
V
mV/
℃
mΩ
S
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 30V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
R
DS(on)*4
g
fs*4
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 4.5A
V
DS
= 5V, I
D
= 4.5A
*1 Pw
≦
10μs, Duty cycle
≦
1%
*2 L
⋍
0.1mH, V
DD
= 15V, R
G
= 25Ω, STARTING T
ch
= 25
℃
Fig.3-1,3-2
*3 MOUNTED ON A CERAMIC BOARD
*4 Pulsed
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© 2014 ROHM Co., Ltd. All rights reserved.
2/11
20140806 - Rev.002
QH8KA2
Datasheet
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Electrical characteristics
(T
a
= 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
15V,V
GS
= 10V
Values
Min.
-
-
-
-
-
-
-
Typ.
365
62
50
7.2
8.0
12.0
5.7
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
= 2.2A
R
L
= 6.8Ω
R
G
= 10Ω
ns
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Gate charge characteristics
(T
a
= 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
V
GS
= 10V
V
DD
⋍
15V
I
D
= 4.5A
Values
Min.
-
-
Typ.
8.4
4.7
1.7
1.6
Max.
-
-
-
-
Unit
Total gate charge
Gate - Source charge
Gate - Drain charge
nC
V
GS
= 4.5V
-
-
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
I
S
T
a
= 25
℃
I
SP*1
V
SD*4
t
rr*4
Q
rr*4
V
GS
= 0V, I
S
= 1.0A
I
S
= 4.5A, V
GS
= 0V
di/dt = 100A/μs
-
-
-
-
-
-
14.1
4.7
12
1.2
-
-
V
ns
nC
Conditions
Min.
-
Values
Typ.
-
Max.
1.0
A
Unit
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
Reverse recovery time
Reverse recovery charge
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© 2014 ROHM Co., Ltd. All rights reserved.
3/11
20140806 - Rev.002
QH8KA2
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2014 ROHM Co., Ltd. All rights reserved.
4/11
20140806 - Rev.002
QH8KA2
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20140806 - Rev.002
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