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SM8S40A

Description
5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
CategoryDiscrete semiconductor    diode   
File Size72KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

SM8S40A Overview

5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB

SM8S40A Parametric

Parameter NameAttribute value
Parts packaging codeDO-218AB
Manufacturer packaging codeDO-218AB
SM8S10 thru SM8S43A
Automotive Transient Voltage Suppressors
FEATURES
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by
test condition)
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Component in accordance to RoHS 2002/95/EC
Dimensions in
inches and (millimeters)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
0.197(5.0)
0.185(4.7)
LEAD 1
0.138(3.5)
0.098(2.5)
0.016 (0.4) Min.
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
LEAD 2/METAL HEATSINK
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 µs waveform
with 10/10 000 µs waveform
SYMBOL
P
PPM
P
D
I
PPM
I
FSM
T
J
, T
STG
VALUE
6600
5200
8.0
see next table
700
- 55 to + 175
UNIT
W
W
A
A
°C
Power dissipation on infinite heatsink at T
C
= 25 °C (Fig. 1)
Peak pulse current with 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse derated above T
A
= 25 °C
http://www.luguang.cn
mail:lge@luguang.cn
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