polyfet rf devices
SP722
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
110 Watts
Junction to
Case Thermal
Resistance
o
1.40 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
11.0 A
RF CHARACTERISTICS (
SYMBOL PARAMETER
Gps
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
10
55
TYP
20.0 WATTS OUTPUT )
MAX
UNITS TEST CONDITIONS
dB
%
20:1
Relative
Idq = 0.40 A, Vds =
Idq = 0.40 A, Vds =
12.5
V, F =
400
MHz
12.5
V, F =
400
MHz
400
MHz
η
VSWR
Idq = 0.40 A, Vds =
12.5
V, F =
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
2
2.6
0.35
19.00
90.0
7.0
110.0
MIN
36
2.0
1
5
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
Ids = 40.00 mA, Vgs = 0V
Vds = 12.5 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.20 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 5.50 A
Vgs = 20V, Vds = 10V
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
SP722
POUT VS PIN GRAPH
SP722
Pout vs. Pin Freq=400MHz, Vds=12.5V, Idq=0.4A
24
20
Pout
16
12
Gain
8
4
0
0
0.5
1
1.5
Pin in Watts
2
2.5
3
Efficiency = 55%
9.50
9.00
1
0
2
4
6
8
10
12
14
16
18
20
1000
CAPACITANCE VS VOLTAGE
S1C 2 DICE CAPACITANCE
12.50
12.00
11.50
11.00
10.50
10
100
Coss
Ciss
Crss
10.00
VDS IN VOLTS
IV CURVE
S1C 2 DIE IV
20
18
16
14
ID IN AMPS
12
10
8
6
4
2
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VD INVO
S
Vg=6v
LTS
vg=8v
14
0
16
18
vg=12v
20
ID & GM VS VGS
S1C 2 DIE ID & GM Vs VG
100.00
Id in amps; Gm in mhos
Id
10.00
gM
1.00
0.10
0
2
4
6
8
10
Vgs in Volts
12
14
16
18
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
RF/Wirelessly
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