UNISONIC TECHNOLOGIES CO., LTD
20N15
20A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
20N15
is an N-Channel POWER MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low gate charge.
The UTC
20N15
is suitable for bridge circuits, power
converters and PWM motor controls.
Power MOSFET
FEATURES
* R
DS(on)
<0.13Ω @V
GS
=10V, I
D
=10A
* High switching speed
* Low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
20N15L-TF1-T
20N15G-TF1-T
20N15L-TF2-T
20N15G-TF2-T
20N15L-TN3-T
20N15G-TN3-T
20N15L-TN3-R
20N15G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F1
TO-220F2
TO-252
TO-252
1
G
G
G
G
Pin Assignment
2
D
D
D
D
3
S
S
S
S
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-904.C
20N15
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
150
V
Gate-Source Voltage
Continuous
V
GSS
±20
V
20
A
Continuous
I
D
Drain Current
Single Pulsed (tp≤10µs)
I
DM
60
A
Starting T
J
=25°C
Single Drain–to–Source
(V
DD
=120V, V
GS
=10V,
60
mJ
E
AS
Avalanche Energy
I
L
=20A, L=0.3mH)
TO-220F1
36
W
Power Dissipation
TO-220F2
P
D
38
W
TO-252
50
W
Operating Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220F1/TO-220F2
Junction to Ambient
TO-252
TO-220F1
Junction to Case
TO-220F2
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
3.47
3.28
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
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QW-R502-904.C
20N15
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-State Resistance
Drain–Source On–Voltage
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=0.25mA, V
GS
=0V
V
DS
=150V, V
GS
=0V
V
DS
=150V, V
GS
=0V, T
J
=125°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=0.25mA
V
GS
=10V, I
D
=10A
V
GS
=10V, I
D
=20A
Power MOSFET
MIN TYP MAX UNIT
150
10
100
100
100
2.0
4.0
0.12 0.13
2.8
1133 1627
332 474
105 174
39.1 55.9
7.5
22
11
25
77 153
33
67
49
97
1.5
20
60
160
1.1
V
µA
µA
nA
nA
V
Ω
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
µC
V
GS
=0V, V
DS
=25V, f=1.0MHz
Q
G
Gate Charge
Q
GS
V
GS
=10V, V
DS
=75V, I
D
=20A
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=75V, V
GS
=10V, I
D
=20A,
R
G
=9.1Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=20A, V
GS
=0V
(Note 1)
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Pulsed Drain-Source Current
I
SM
Body Diode Reverse Recovery Time
t
RR
I
S
=20A, V
GS
=0V, dI
S
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-904.C
20N15
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
0
40
80
120
160
200
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.3
1.2
0.6 0.9
1.5 1.8
Gate Threshold Voltage, V
TH
(V)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
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QW-R502-904.C
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