UNISONIC TECHNOLOGIES CO., LTD
3N90Z
3 Amps, 900 Volts
N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
3N90Z
provides excellent R
DS(ON)
, low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
Preliminary
Power MOSFET
FEATURES
* R
DS(ON)
=4.1Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90ZL-TF1-T
3N90ZG-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Note:
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-913.a
3N90Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
V
900
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
V
900
Gate-Source Voltage
V
GSS
±20
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30(MIN)
V
Insulation Withstand Voltage (DC)
V
ISO
2500
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
180
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50V
4. I
SD
≦3A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
62.5
5
UNIT
°C/W
°C/W
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2 of 6
QW-R502-913.a
3N90Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
900
V
Drain-Source Leakage Current
I
DSS
V
DS
=900V, V
GS
=0V
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
4.1 4.8
Ω
DYNAMIC CHARACTERISTICS
590
pF
Input Capacitance
C
ISS
Output Capacitance
C
OSS
63
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
18
ns
V
DD
=450V, I
D
=1.5 A, R
G
=4.7Ω
V
GS
=10V
Turn-On Rise Time
t
R
7
ns
Turn-Off Delay Time
t
D(OFF)
45
ns
V
DD
=720V, I
D
=1.5 A, R
G
=4.7Ω
V
GS
=10V
Turn-Off Fall Time
t
F
18
ns
Total Gate Charge
Q
G
22.7
nC
V
DD
=720V, I
D
=3A, V
GS
=10V
Gate-Source Charge
Q
GS
4.2
nC
Gate-Drain Charge
Q
DD
12
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Source-Drain Current
I
SD
3
A
Source-Drain Current (Pulsed)
I
SDM
12
A
Reverse Recovery Current
I
RRM
8.7
A
I
SD
=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
t
RR
510
ns
V
DD
=100V, T
J
=25°C
Body Diode Reverse Recovery Charge
Q
RR
2.2
nC
Notes: 1. Pulse width=300μs, Duty cycle≦1.5%
2. C
OSS(EQ)
is defined asa constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
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3 of 6
QW-R502-913.a
3N90Z
D.U.T.
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-913.a
3N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
3mA
V
GS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
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QW-R502-913.a
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