UNISONIC TECHNOLOGIES CO., LTD
5N25Z
Preliminary
Power MOSFET
3.8A, 250V N-CHANNEL
MOSFET
DESCRIPTION
The UTC
5N25Z
is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge. It
can also withstand high energy pulse in the avalanche and
commutation modes.
The UTC
5N25Z
is suitable for high efficiency switching DC/DC
converter, motor control and switch mode power supply.
FEATURES
* R
DS(ON)
<1.2Ω @ V
GS
=10V
* Low gate charge ( Typ=14nC)
* Low C
RSS
( Typ=6.0pF)
* High switching speed
* ESD Capability
SYMBOL
ORDERING INFORMATION
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
5N25ZL-TN3-T
5N25ZG-TN3-T
5N25ZL-TN3-R
5N25ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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1 of 6
QW-R502-853.b
5N25Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
250
V
Gate-Source Voltage
V
GSS
±20
V
3.8
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
9
A
Avalanche Current (Note 2)
I
AR
3.8
A
Single Pulsed (Note 3)
E
AS
60
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
3.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5
V/ns
T
A
=25°C
2.5
W
Power Dissipation T
C
=25°C
P
D
37
W
Derate above 25°C
0.29
W/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=6.2mH, I
AS
=3.8A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C.
4. I
SD
≤4.5A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C.
THERMAL CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATINGS
110
3.4
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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2 of 6
QW-R502-853.b
5N25Z
Preliminary
Power MOSFE
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
MIN TYP MAX UNIT
250
0.18
1
+10
-10
2
4
0.78 1.2
0.92 1.25
3.35
250
40
6
14
4
2.7
30
26
90
27
325
50
8
20
V
V/°C
µA
µA
µA
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown
Voltage
Temperature
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Coefficient
Drain-Source Leakage Current
I
DSS
V
DS
=250V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=1.9A
Static Drain-Source On-State Resistance
R
DS(ON)
(Note 1)
V
GS
=5V, I
D
=1.9A
Forward Transconductance
g
FS
V
DS
=30V, I
D
=1.9A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=30V, I
D
=1.3A,
Gate to Source Charge
Q
GS
I
G
=100µA (Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=10V (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3.8A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=4.5A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%
2. Essentially independent of operating temperature
35
40
110
40
3.8
9
1.5
95
0.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-853.b
5N25Z
Preliminary
Power MOSFE
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
300nF
V
DS
V
GS
Q
G
10V
Q
GS
Q
GD
3mA
DUT
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-853.b
5N25Z
Preliminary
Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
R
G
V
DS
L
-
I
SD
V
GS
Driver
V
DD
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-853.b
Embedded System
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