UNISONIC TECHNOLOGIES CO., LTD
5N60Z
Preliminary
Power MOSFET
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
5N60Z
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* R
DS(ON)
= 2.2Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60ZL-TF1-T
5N60ZG-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Note:
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-909.a
5N60Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
5
A
Continuous Drain Current
I
D
5
A
Pulsed Drain Current (Note 2)
I
DM
20
A
210
Single Pulsed (Note 3)
E
AS
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
10
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
36
W
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 16.8mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
3.47
UNIT
°C/W
°C/W
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QW-R502-909.a
5N60Z
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
μA
μA
V/°C
4.0
2.2
670
72
8.5
30
90
85
100
19
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Forward
I
GSS
Reverse
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
=5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480 V, I
D
= 5A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 5A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 5A,
d
IF
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Note 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
V
GS
=0V, I
D
= 250μA
600
V
DS
=600V, V
GS
= 0V
V
GS
=20V, V
DS
= 0V
V
GS
=-20V, V
DS
= 0V
I
D
=250μA, Referenced to 25°C
2.0
1
+5
-5
0.6
1.8
515
55
6.5
10
42
38
46
15
2.5
6.6
1.4
5
20
300
2.2
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3 of 6
QW-R502-909.a
5N60Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-909.a
5N60Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-909.a
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