Standard SRAM, 16KX4, 85ns, CMOS, CDIP22
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| package instruction | DIP, DIP22,.3 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 85 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T22 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of terminals | 22 |
| word count | 16384 words |
| character code | 16000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 16KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.14 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| 5962-01-286-1596 | 5962-01-389-1107 | IDT7188LF | IDT7188LRT | IDT7188SF | IDT7188SRT | 5962-01-326-2473 | |
|---|---|---|---|---|---|---|---|
| Description | Standard SRAM, 16KX4, 85ns, CMOS, CDIP22 | Standard SRAM, 16KX4, 45ns, CMOS, CDIP22 | Standard SRAM, 16KX4, CMOS | Standard SRAM, 16KX4, CMOS | Standard SRAM, 16KX4, CMOS | Standard SRAM, 16KX4, CMOS | Standard SRAM, 16KX4, 55ns, CMOS, CDIP22 |
| Is it lead-free? | Contains lead | Contains lead | Lead free | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | _compli | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| memory density | 65536 bit | 65536 bi | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| word count | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| character code | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Encapsulate equivalent code | DIP22,.3 | DIP22,.3 | FL(UNSPEC) | DIE OR CHIP | FL(UNSPEC) | DIE OR CHIP | DIP22,.3 |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 | 225 | NOT SPECIFIED | 225 | 225 | 225 | 260 |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Maximum time at peak reflow temperature | 30 | 30 | NOT SPECIFIED | 30 | 30 | 30 | 6 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | - |
| Package body material | CERAMIC | CERAMIC | CERAMIC | - | CERAMIC | - | CERAMIC |
| encapsulated code | DIP | DIP | DFP | - | DFP | - | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | FLATPACK | - | FLATPACK | - | IN-LINE |
| Minimum standby current | 4.5 V | 4.5 V | - | 2 V | - | 4.5 V | 4.5 V |
| surface mount | NO | NO | YES | - | YES | - | NO |
| Terminal surface | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | - |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | FLAT | - | FLAT | - | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | - | DUAL | - | DUAL |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | - |