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SIHFBG30

Description
3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size4MB,7 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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SIHFBG30 Overview

3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHFBG30 Parametric

Parameter NameAttribute value
Minimum breakdown voltage1000 V
Number of terminals3
each_compliYes
stateActive
Shell connectionDRAIN
structureSINGLE
drain_current_max__abs___id_3.1 A
Maximum leakage current3.1 A
Maximum drain on-resistance5 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_125 W
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Power
surface mountNO
terminal coatingTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFBG30, SiHFBG30
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
80
10
42
Single
D
FEATURES
1000
5.0
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFBG30PbF
SiHFBG30-E3
IRFBG30
SiHFBG30
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
1000
± 20
3.1
2.0
12
1.0
280
3.1
13
125
1.0
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 55 mH, R
G
= 25
Ω,
I
AS
= 3.1 A (see fig. 12).
c. I
SD
3.1 A, dI/dt
80 A/µs, V
DD
600, T
J
150 °C.
d. 1.6 mm from case.
www.kersemi.com
1

SIHFBG30 Related Products

SIHFBG30 IRFBG30 SIHFBG30-E3 IRFBG30PBF
Description 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Minimum breakdown voltage 1000 V 1000 V 1000 V 1000 V
Number of terminals 3 3 3 3
state Active Active Active TRANSFERRED
structure SINGLE SINGLE SINGLE Single WITH BUILT-IN diode
Maximum leakage current 3.1 A 3.1 A 3.1 A 3.1 A
Maximum drain on-resistance 5 ohm 5 ohm 5 ohm 5 ohm
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
Number of components 1 1 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY Plastic/Epoxy
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR Rectangle
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT Flange mounting
terminal coating TIN LEAD TIN LEAD TIN LEAD NOT SPECIFIED
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-hole
Terminal location SINGLE SINGLE SINGLE single
transistor applications SWITCHING SWITCHING SWITCHING switch
Transistor component materials SILICON SILICON SILICON silicon
each_compli Yes Yes Yes -
Shell connection DRAIN DRAIN DRAIN -
drain_current_max__abs___id_ 3.1 A 3.1 A 3.1 A -
jedec_95_code TO-220AB TO-220AB TO-220AB -
jesd_30_code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
jesd_609_code e0 e0 e0 -
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum operating temperature 150 Cel 150 Cel 150 Cel -
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
larity_channel_type N-CHANNEL N-CHANNEL N-CHANNEL -
wer_dissipation_max__abs_ 125 W 125 W 125 W -
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL -
sub_category FET General Purpose Power FET General Purpose Power FET General Purpose Power -
surface mount NO NO NO -
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

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