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SK14B

Description
1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size443KB,2 Pages
ManufacturerGaomi Xinghe Electronics
Websitehttp://www.sddzg.com
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SK14B Overview

1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA

SK14B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, SMB, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage40 V
Maximum average forward current1 A
星合电子
1.0 AMPS. Surface Mount Schottky Barrier Rectifiers
XINGHE ELECTRONICS
Voltage Range 20 to 100 Volts
Current
1.0 Amperes
SK12B
THRU
SK110B
Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.093 gram
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
=75℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current (Note 1)@ T
A
=25℃
at Rated DC Blocking Voltage
@ T
A
=100℃
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
SK
12B
20
14
20
SK
13B
30
21
30
SK
14B
40
28
40
1.0
30
SK
15B
50
35
50
SK
16B
60
42
60
SK
Units
110B
100
70
100
V
V
V
A
A
0.5
0.5
10.0
0.75
5.0
25
110
0.85
1.0
V
mA
mA
℃/W
pF
Typical Thermal Resistance ( Note 1 )
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
θ
JL
Cj
T
J
T
STG
-55 to +125
-55 to +150
-55 to +150
Notes
:
1. Thermal Resistance from Junction to Lead.
2. Measured at 1.0 MHz and Applies Reverse Voltage of 4.0V.
3. Measured on P.C.Board with 0.4 x 0.4” (10 x 10mm) Copper Pad Areas.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

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SK14B SK110B SK12B SK13B SK15B SK16B
Description 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 30 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AA

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