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HITJ0201MP_13

Description
Silicon P Channel MOS FET Power Switching
File Size101KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HITJ0201MP_13 Overview

Silicon P Channel MOS FET Power Switching

Preliminary
Datasheet
HITJ0201MP
–20V, –3.4A, 69mmax.
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 53 m typ (V
GS
= –4.5 V, I
D
= –1.8 A)
Low drive current
High speed switching
2.5 V gate drive
R07DS0473EJ0200
Rev.2.00
May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
G
1
2
S
1
2
1. Source
2. Gate
3. Drain
Note:
Marking is “UV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
(pulse) Note2
Tch
Tstg
Ratings
–20
+8 / –12
–3.4
–10
–3.4
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6

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