R1Q2A7218ABB datasheet, PDF - EEWORLD Datasheet

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R1Q2A7218ABB: Description72-Mbit QDR SRAM 2-word Burst; File Size814KB，36 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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R1Q2A7218ABB Overview

72-Mbit QDR SRAM 2-word Burst

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R1Q2A7236ABB / R1Q2A7218ABB / R1Q2A7209ABB Series

R1Q2A7236ABB

R1Q2A7218ABB

R1Q2A7209ABB

72-Mbit QDR™II SRAM

2-word Burst

Description

The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the

R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced

CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral

circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched

on the positive edge of K and /K. These products are suitable for applications which require synchronous

operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in

165-pin plastic FBGA package.

R10DS0164EJ0011

Rev. 0.11

2013.01.15

Features

Power Supply

• 1.8 V for core (V

), 1.4 V to V

for I/O (V

DDQ

)

Clock

• Fast clock cycle time for high bandwidth

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches

• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

• Clock-stop capability with

μs

restart

I/O

• Separate independent read and write data ports with concurrent transactions

• 100% bus utilization DDR read and write operation

• HSTL I/O

• User programmable output impedance

• DLL/PLL circuitry for wide output data valid window and future frequency scaling

Function

• Two-tick burst for low DDR transaction size

• Internally self-timed write control

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

Package

• 165 FBGA package (13 x 15 x 1.4 mm)

Notes:

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress

Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team)

2. The specifications of this device are subject to change without notice. Please contact your nearest

Renesas Electronics Sales Office regarding specifications.

3. Refer to

"http://www.renesas.com/products/memory/fast_sram/qdr_sram/index.jsp"

for the latest and detailed information.

4. Descriptions about x9 parts in this datasheet are just for reference.

Rev. 0.11 : 2013.01.15

R10DS0164EJ0011

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