R1QEA7218ABG datasheet, PDF - EEWORLD Datasheet

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R1QEA7218ABG: Description72-Mbit DDRII SRAM 2-word Burst; File Size883KB，39 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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R1QEA7218ABG Overview

72-Mbit DDRII SRAM 2-word Burst

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R1QBA72 / R1QEA72 Series

R1QBA7236ABG / R1QBA7218ABG

R1QEA7236ABG / R1QEA7218ABG

72-Mbit DDRII+ SRAM

2-word Burst

Description

The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products

are suitable for applications which require synchronous operation, high speed, low voltage, high density and

wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

= B: Latency =2.5, w/o ODT

= E: Latency =2.5, w/ ODT

# = H: Latency =2.0, w/o ODT

# = L: Latency =2.0, w/ ODT

R10DS0181EJ0011

Rev. 0.11

2013.01.15

Features

Power Supply

• 1.8 V for core (V

), 1.4 V to V

for I/O (V

DDQ

)

Clock

• Fast clock cycle time for high bandwidth

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

• Clock-stop capability with

μs

restart

I/O

• Common data input/output bus

• Pipelined double data rate operation

• HSTL I/O

• User programmable output impedance

• DLL/PLL circuitry for wide output data valid window and future frequency scaling

• Data valid pin (QVLD) to indicate valid data on the output

Function

• Two-tick burst for low DDR transaction size

• Internally self-timed write control

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

Package

• 165 FBGA package (15 x 17 x 1.4 mm)

Notes:

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress

Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team)

2. The specifications of this device are subject to change without notice. Please contact your nearest

Renesas Electronics Sales Office regarding specifications.

3. Refer to

"http://www.renesas.com/products/memory/fast_sram/qdr_sram/index.jsp"

for the latest and detailed information.

4. Descriptions about x9 parts in this datasheet are just for reference.

Rev. 0.11 : 2013.01.15

R10DS0181EJ0011

R1QEA7218ABG Related Products

	R1QEA7218ABG	R1QBA7218ABG	R1QBA7236ABG	R1QEA7236ABG
Description	72-Mbit DDRII SRAM 2-word Burst	72-Mbit DDRII SRAM 2-word Burst	72-Mbit DDRII SRAM 2-word Burst	72-Mbit DDRII SRAM 2-word Burst

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