hinT=00000.0000.0000.0000.0000
--
-
00000.1100
.
1100
.
0000
.
0000---
00000.0000.0000.0000.0000---QDRII+_RL25
R1QAA36**C / R1QDA36**C Series
R1QAA3636CBB / R1QAA3618CBB
/ R1QAA3609CBB
R1QDA3636CBB / R1QDA3618CBB
/ R1QDA3609CBB
R1QGA3636CBB / R1QGA3618CBB / R1QGA3609CBB
R1QKA3636CBB / R1QKA3618CBB / R1QKA3609CBB
36-Mbit QDR™II+ SRAM
4-word Burst
Description
The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous
quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled
by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable
for applications which require synchronous operation, high speed, low voltage, high density and wide bit
configuration. These products are packaged in 165-pin plastic FBGA package.
#
= A: Read Latency =2.5, w/o ODT
#
= D: Read Latency =2.5, w/ ODT
# = G: Read Latency =2.0, w/o ODT
# = K: Read Latency =2.0, w/ ODT
R10DS0192EJ0010
Rev. 0.10b
2012.03.12
Features
Power Supply
• 1.8 V for core (V
DD
), 1.4 V to V
DD
for I/O (V
DDQ
)
Clock
• Fast clock cycle time for high bandwidth
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
• Clock-stop capability with s restart
I/O
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR read and write operation
• HSTL I/O
• User programmable output impedance
• DLL/PLL circuitry for wide output data valid window and future frequency scaling
• Data valid pin (QVLD) to indicate valid data on the output
Function
• Four-tick burst for reduced address frequency
• Internally self-timed write control
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
Package
• 165 FBGA package (13 x 15 x 1.4 mm)
Notes:
1.
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress
Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team)
2. The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Electronics Sales Office regarding specifications.
3. Refer to
"http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp"
for the latest and detailed information.
4. Descriptions about x9 parts in this datasheet are just for reference.
Rev. 0.10b : 2012.03.12
R10DS0192EJ0010
PAGE : 1
hinS=
00000.0000.0000.0000.0000
--
-
00000.
1111
.1111.1111.1111
---
00000.0000.0000.0000.0000---
036M-II+
R1QAA36**C / R1QDA36**C Series
36M QDR II+ / DDR II+ SRAM Lineup
- Renesas supports or plans to support the parts listed below.
QDR II+ / DDR II+
Frequency (max)
(MHz)
Cycle Time (min)
(ns)
yy
Part Number
R1Q A A36 18 C Bv-
yy
R1Q A A36 36 C Bv-
yy
R1Q B A36 18 C Bv-
yy
R1Q B A36 36 C Bv-
yy
R1Q C A36 18 C Bv-
yy
R1Q C A36 36 C Bv-
yy
R1Q D A36 18 C Bv-
yy
R1Q D A36 36 C Bv-
yy
R1Q E A36 18 C Bv-
yy
R1Q E A36 36 C Bv-
yy
R1Q F A36 18 C Bv-
yy
R1Q F A36 36 C Bv-
yy
R1Q G A36 18 C Bv-
yy
R1Q G A36 36 C Bv-
yy
R1Q H A36 18 C Bv-
yy
R1Q H A36 36 C Bv-
yy
R1Q J A36 18 C Bv-
yy
R1Q J A36 36 C Bv-
yy
R1Q K A36 18 C Bv-
yy
R1Q K A36 36 C Bv-
yy
R1Q L A36 18 C Bv-
yy
R1Q L A36 36 C Bv-
yy
R1Q M A36 18 C Bv-
yy
R1Q M A36 36 C Bv-
yy
Product
Type
Burst
Length
Latency
(Cycle)
ODT
Organi-
zation
533
500
450
2.22
-22
-22
-22
-22
-22
-22
-22
-25
-25
-25
-25
-25
-25
400
2.50
-25
375
2.66
-27
333
3.00
-30
333
3.00
-30
QDR II / DDR II
300
3.30
-33
250
4.00
-40
200
5.00
-50
No
1.875 2.00
-19
-19
-19
-19
-19
-19
-19
-20
-20
-20
-20
-20
-20
-20
17
18
20
21
23
24
26
27
29
30
32
33
35
36
38
39
41
42
44
45
47
48
50
51
QDRII+ B4
2.5
B2
DDRII+
B4
QDRII+ B4
B2
DDRII+
B4
QDRII+ B4
2.0
B2
DDRII+
B4
QDRII+ B4
B2
DDRII+
B4
Yes
2.0
No
Yes
2.5
No
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
x18
x36
Notes:
1. "v" represents the
package size.
If "v" = "G" then size is 15 x 17 mm, and if "v" = "B" then 13 x 15 mm.
2. "yy" represents the
speed bin.
"R1QAA3636CBG-20" can operate at
500 MHz(max)
of frequency, for example.
3. The part which is not listed above is not supported, as of the day when this datasheet was issued,
in spite of the existence of the part number or datasheet.
Rev. 0.10b : 2012.03.12
R10DS0192EJ0010
PAGE : 3
Embedded System
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