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BUL42D

Description
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size180KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUL42D Overview

4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR

BUL42D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionCASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging codeCASE 221A-09
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresBUILT-IN ANTISATURATION NETWORK
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUL42D
High Speed, High Gain
Bipolar NPN Transistor
Integrating an
Antisaturation Network and
a Transient Voltage
Suppression Capability
The BUL42D is a state–of–the–art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
http://onsemi.com
4 AMPERES
700 VOLTS
75 WATTS
POWER TRANSISTOR
Free Wheeling Diode Built In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
“Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current – Continuous
– Peak (Note 1)
Base Current – Continuous
– Peak (Note 1)
*Total Device Dissipation @ T
C
= 25_C
*Derate above 25_C
Operating and Storage Temperature
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
700
9
4.0
8.0
1.0
2.0
75
0.6
–65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
TO–220
CASE 221A
STYLE 1
BUL
42D
YWW
MARKING
DIAGRAM
Y
WW
= Year
= Work Week
TYPICAL GAIN
Typical Gain @ I
C
= 1 A, V
CE
= 2 V
Typical Gain @ I
C
= 0.3 A, V
CE
= 1 V
h
FE
h
FE
13
16
ORDERING INFORMATION
Device
BUL42D
Package
TO–220
Shipping
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance –
Junction–to–Case
Thermal Resistance –
Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
Symbol
R
θJC
R
θJA
T
L
Value
1.66
62.5
260
Unit
°C/W
°C/W
°C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
©
Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 1
Publication Order Number:
BUL42D/D
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Index Files: 2549  1909  1359  1814  1159  52  39  28  37  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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