®
BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code
BULB128D-1
s
Marking
BULB128D
Shipment
Tube
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
12
I
2
PAK
(TO-262)
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10µs, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
700
400
V
(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
1/7
September 2003
BULB128D-1
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CEO
V
(BR)EBO
Parameter
Collector Cut-off
Current (V
BE
= 0 V)
Collector Cut-off
Current (I
B
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Test Conditions
V
CE
= 700 V
V
CE
= 700 V
V
CE
= 400 V
I
E
= 10 mA
9
T
C
= 125 C
o
Min.
Typ.
Max.
100
500
250
18
Unit
µA
µA
µA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
I
C
I
C
I
C
I
C
=
=
=
=
0.5 A
1A
2.5 A
4A
I
B
I
B
I
B
I
B
=
=
=
=
0.1 A
0.2 A
0.5 A
1A
0.7
1
1.5
0.5
1.1
1.2
1.3
10
12
32
2.5
V
V
V
V
V
V
V
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
DC Current Gain
Forward Voltage Drop
INDUCTIVE LOAD
Storage Time
Fall Time
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 10 mA
I
C
= 2 A
I
f
= 2 A
V
CC
= 200 V
I
B1
= 0.4 A
R
BB
= 0
Ω
(see fig.1)
V
CC
= 250 V
I
B1
= 0.4 A
T
p
= 300
µs
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
V
CE
= 5 V
V
CE
= 5 V
I
C
= 2 A
V
BE(off)
= -5 V
L = 200
µH
I
C
= 2 A
I
B2
= -0.4 A
(see fig.2)
h
FE
∗
V
f
t
s
t
f
V
µs
µs
0.6
0.1
t
s
t
f
2
0.2
2.9
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BULB128D-1
Figure 1:
Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2:
Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
Embedded System
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