BUZ901X4S datasheet, PDF - EEWORLD Datasheet

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BUZ901X4S: Description32 A, 160 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size26KB，2 Pages; ManufacturerETC

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BUZ901X4S Overview

32 A, 160 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

BUZ901X4S Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	160 V
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	Welding LUG
Terminal location	UPPER
Packaging Materials	Plastic/Epoxy
structure	COMPLEX
Number of components	4
transistor applications	amplifier
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	32 A

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MAGNA

TEC

3 1 .5 (1 .2 4 0 )

3 1 .7 (1 .2 4 8 )

7 .8 (0 .3 0 7 )

8 .2 (0 .3 2 2 )

1 1 .8 (0 .4 6 3 )

1 2 .2 (0 .4 8 0 )

W = 4 .1 (0 .1 6 1 )

4 .3 (0 .1 6 9 )

4 .8 (0 .1 8 7 )

4 .9 (0 .1 9 3 )

(4 places)

8 .9 (0 .3 5 0 )

9 .6 (0 .3 7 8 )

BUZ900X4S

BUZ901X4S

NEW PRODUCT UNDER DEVELOPMENT

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

Hex Nut M 4

(4 places)

POWER MOSFETS FOR

AUDIO APPLICATIONS

2 5 .2 (0 .9 9 2 )

2 5 .4 (1 .0 0 0 )

4 .0 (0 .1 5 7 )

4 .2 (0 .1 6 5 )

0 .7 5 (0 .0 3 0 )

0 .8 5 (0 .0 3 3 )

1 2 .6 (0 .4 9 6 )

1 2 .8 (0 .5 0 4 )

FEATURES

• HIGH SPEED SWITCHING

3.3 (0 .1 2 9)

3.6 (0.14 3 )

1 4 .9 (0.58 7 )

1 5 .1 (0.59 4 )

3 0 .1 (1 .1 8 5 )

3 0 .3 (1 .1 9 3 )

3 8 .0 (1.4 9 6 )

3 8 .2 (1.5 0 4 )

5 .1 (0 .2 0 1 )

5 .9 (0 .2 3 2 )

1 .9 5 (0 .0 7 7 )

2 .1 4 (0 .0 8 4 )

R =

4 .0 (0 .1 57 )

(2 P lac e s)

• N–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

SOT227

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

Pin 4 – Drain

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• P–CHANNEL ALSO AVAILABLE

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSX

Drain – Source Voltage

D(PK)

stg

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

BUZ900X4S

160V

BUZ901X4S

200V

±14V

32A

500W

–55 to 150°C

150°C

0.3°C/W

Magnatec.

Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.

Prelim. 4/94

BUZ901X4S Related Products

	BUZ901X4S	BUZ900X4S
Description	32 A, 160 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	32 A, 160 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4
Minimum breakdown voltage	160 V	160 V
state	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	Welding LUG	Welding LUG
Terminal location	UPPER	UPPER
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	COMPLEX	COMPLEX
Number of components	4	4
transistor applications	amplifier	amplifier
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply
Maximum leakage current	32 A	32 A

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