TQM829007
Applications
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0.6-1.0GHz ¼W Digital Variable Gain Amplifier
3G / 4G Wireless Infrastructure
CDMA, WCDMA, LTE
Repeaters
ISM Infrastructure
28-pin 6x6mm leadless SMT package
Product Features
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0.6-1.0 GHz Frequency Range
31.5 dB Maximum Gain at 0.9 GHz
31.5 dB Gain Range in 0.5 dB Steps
+40 dBm Output IP3
+24.3 dBm Output P1dB
2.1 dB Noise Figure at Max. Gain State
Fully Internally Matched Module
Integrated Blocking Capacitors, Bias Inductors
3-wire SPI Control Programming
Functional Block Diagram
28
27
26
25
24
23
LE 1
DATA 2
CLK 3
NC 4
GND 5
RFIN 6
GND 7
Vcc_AMP1/ 8
GND 9
AMP1
DC Biasing
DC Biasing
S
P
I
DSA
Matching
AMP2
22
21 GND
20 GND
19 GND
18 GND
17 GND
16 RFOUT
15 GND
GND 10
GND 11
GND 12
GND 13
Vcc_AMP2 14
Backside
Paddle - GND
General Description
The TQM829007 is a digital variable gain amplifier
(DVGA) featuring high linearity performance in a fully
integrated module. The amplifier module features the
integration of a low noise amplifier gain block, a digital-
step attenuator (DSA), along with a high linearity ¼W
amplifier. The module has the added features of integrating
all matching components with bias chokes and blocking
capacitors. The internal DSA offers 0.5 dB step, 6-bit, and
31.5 dB range and is controlled with a serial periphery
interface (SPI
TM
).
The TQM829007 features variable gain from 0 to 31.5 dB
at 0.9 GHz, has +40 dBm Output IP3, and +24.3 dBm
P1dB. The amplifier also has a very low 2.1 dB Noise
Figure (at maximum gain) allowing it to be an ideal DVGA
for both receiver and transmitter applications.
The
amplifier operates from a single +5V supply and is
available in a compact 28-pin 6x6 mm leadless SMT
package.
The TQM829007 is pin compatible with the TQM879006
(1.4-2.7GHz, 0.25W DVGA) and TQM879008 (1.5-2.7
GHz, 0.5W DVGA). This allows one to size the right type
of device for specific system level requirements as well as
making the DVGA family ideal for applications where a
common PCB layout is used for different frequency bands.
Data Sheet: Rev F 04/27/12
© 2012 TriQuint Semiconductor, Inc.
Pin Configuration
Pin #
Symbol
1
2
3
4, 22
6
8
14
16
28
All Other Pins
LE
DATA
CLK
NC
RFIN
VCC_AMP1
VCC_AMP2
RFOUT
VCC_SPI
GND
Ordering Information
Part No.
TQM829007
0.6-1.0 GHz Digital Variable Gain Amp
Fully Assembled Evaluation Board
TQM829007-PCB
Includes USB control board (EVH)
Standard T/R size = 2500 pieces on a 13” reel.
Description
-
1 of 12-
Disclaimer: Subject to change without notice
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TQM829007
Specifications
0.6-1.0GHz ¼W Digital Variable Gain Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω,T = 25ºC
Vcc (pins 8, 14, 28)
Digital Input Voltage
-55 to 150 C
+12 dBm
+5.5 V
V
cc
+ 0.5V
Recommended Operating Conditions
o
Rating
Vcc (pins 8, 14, 28)
Case Temperature
Junction Temperature, T
J
Parameter
Min
4.75
-40
Typ
5
Max Units
5.25
85
170
V
o
C
o
C
T
J
specified for >10
6
hours MTTF
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vcc = +5V, Maximum Gain State.
Parameter
Operational Freq Range
Test Frequency
Gain
Gain Control Range
Accuracy Error
Control Interface
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
I/O Impedance
Supply Voltage
Supply Current
Thermal Resistance,
θ
jc
Conditions
Min
600
Typ
Max
1000
Units
MHz
MHz
dB
dB
dB
Bit
dB
dB
dBm
dBm
dB
Ω
V
mA
o
C/W
0.5 dB Step Size
All States, 3 wire SPI, 6 states
3-wire serial interface
Pout = +11 dBm/tone,
∆f
= 1MHz Spacing
Module (junction to case)
900
28.5
31.7
31.5
±(0.5+5% of Attenuation setting) Max
6
16
22
+24.3
+36.5
+40
2.1
50
+5
130
174
215
36.7
Data Sheet: Rev F 04/27/12
© 2012 TriQuint Semiconductor, Inc.
-
2 of 12-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TQM829007
0.6-1.0GHz ¼W Digital Variable Gain Amplifier
Application Circuit (TQM829007-PCB)
J3-10
J3-11
J3-12
J3-13
J3-14
J3-19
Vcc_AMP
GND
NC
J3-15
J3-16
J3-17
GND
DATA
CLK
LE
J3-18
C8
SPI_Vcc
GND
SPI_Vcc
1
2
3
4
5
J1
RF
Input
C1
0
Ω
GND
GND
GND
0.1uF
28
27
26
25
24
23
22
SPI_LE
GND
GND
GND
GND
GND
RF_OUT
21
20
19
18
17
16
15
C13
C2
0
Ω
J2
RF
Output
SPI_DATA
SPI_CLK
NC
GND
RF_IN
Vcc_AMP1
U1
6X6_ 28PIN
6
7
GND
GND
GND
GND
C12
8
9
10
11
12
13
GND
GND
14
Vcc_AMP
2
GND
4.7uF
FB1
0
Ω
FB2
0
Ω
4.7uF
Notes:
1. For PCB Board Layout, see page 9 for more information.
2. All Components are of 0603 size unless stated otherwise.
3.
For SPI Timing Diagram, see page 6.
4.
0 Ω jumpers may be replaced with copper traces in the target application layout.
5. Different ground pins are used for SPI (digital) and analog supply voltages.
6.
The primary RF microstrip characteristic line impedance is 50 Ω.
7. The single power supply is used to provide supply voltage to AMP1 and AMP2.
Bill of Material: TQM829007-PCB
Reference Desg.
U1
C8
C12, C13
C1, C2, FB1, FB2
C4
0.1 uF
4.7 uF
0
Ω
Do Not Place
Value
Description
0.6 – 1.0 GHz ¼ W DVGA
Cap, Chip, 0603, 16V, X7R, 10%
Cap, Chip, 0603, 6.3V, X5R, 20%
Res, Chip, 0603, 1/16W, 5%
Manufacturer
TriQuint
various
various
various
Part Number
TQM829007
Data Sheet: Rev F 04/27/12
© 2012 TriQuint Semiconductor, Inc.
-
3 of 12-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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GND
J3-20
J3-1
J3-2
J3-3
J3-4
J3-5
J3-6
J3-7
J3-8
J3-9
TQM829007
Frequency
0.6-1.0GHz ¼W Digital Variable Gain Amplifier
Typical Performance, Maximum Gain State
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 @ Pout = 11 dBm/tone,
∆f
= 1 MHz
Noise Figure
Supply Voltage
Supply Current
GHz
dB
dB
dB
dBm
dBm
dB
V
mA
30.5
10
8
+24.6
+40
2.2
0.6
31
10.5
10
+24.5
+39.5
2.2
0.7
31.5
12
14
+24.3
+39.3
2.0
+5
174
0.8
31.7
16
22
+24.3
+39.5
2.1
0.9
31.6
20
18
+24.4
+38.7
2.1
1.0
Note:
1. The evaluation board can be used with TriQuint’s USB interface board. Refer to TriQuint’s website for more information.
Typical Performance Plots
35
30
25
Gain (dB)
Gain (dB)
Gain vs. Freq over Attenuation States
Temp. = 25
o
C
34
32
30
28
26
24
Gain vs. Freq over Temperature
Maximum Gain State
20
15
10
5
0
-5
0.6
0.7
0.8
0.9
1.0
1.1
0dB
4dB
0.5dB
8dB
1dB
16dB
2dB
31.5dB
+85
°
C
+25
°
C
−40
°
C
0.6
0.7
0.8
0.9
1.0
1.1
Frequency (GHz)
Frequency (GHz)
0
-5
S11 (dB)
S11 vs. Freq over Attenuation States
Temp. = 25
o
C
0
-5
S11 (dB)
S11 vs. Freq over Temperature
Maximum Gain State
0dB
4dB
0.5dB
8dB
1dB
16dB
2dB
31.5dB
-10
-15
-20
-25
0.6
0.7
0.8
0.9
1.0
1.1
-10
-15
-20
-25
0.6
0.7
0.8
0.9
+85
°
C
+25
°
C
−40
°
C
1.0
1.1
Frequency (GHz)
Frequency (GHz)
Data Sheet: Rev F 04/27/12
© 2012 TriQuint Semiconductor, Inc.
-
4 of 12-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TQM829007
0
-5
S22 (dB)
Temp. = 25
o
C
0.6-1.0GHz ¼W Digital Variable Gain Amplifier
S22 vs. Freq over Attenuation States
0dB
4dB
0.5dB
8dB
1dB
16dB
2dB
31.5dB
0
-5
S22 (dB)
S22 vs. Freq over Temperature
Maximum Gain State
-10
-15
-20
-25
0.6
0.7
0.8
0.9
1.0
1.1
-10
-15
-20
-25
0.6
0.7
0.8
0.9
+85
°
C
+25
°
C
−40
°
C
1.0
1.1
Frequency (GHz)
50
Frequency (GHz)
1 MHz Tone Spacing
Pout/Tone = 11dBm
Maximum Gain State
OIP3 vs. Frequency
+85
°
C
+25
°
C
−40
°
C
50
45
OIP3 (dBm)
OIP3 vs. Attenuation State
1 MHz Tone Spacing
Pout/Tone = 11dBm
Frequency : 900 MHz
45
OIP3 (dBm)
40
35
30
25
40
35
+85
°
C
+25
°
C
−40
°
C
30
0.6
0.7
0.8
0.9
1.0
0
4
8
12
16
Frequency (GHz)
27
26
P1dB (dBm)
Attenuation State (dB)
4.0
P1dB vs. Frequency
Maximum Gain State
Noise Figure vs. Frequency
Maximum Gain State
+85
°
C
+25
°
C
−40
°
C
NF (dB)
3.0
+85
°
C
+25
°
C
−40
°
C
25
24
23
22
0.6
0.7
0.8
0.9
1.0
2.0
1.0
0.0
0.6
0.7
0.8
0.9
1.0
Frequency (GHz)
Frequency (GHz)
Data Sheet: Rev F 04/27/12
© 2012 TriQuint Semiconductor, Inc.
-
5 of 12-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®