Note1: The maximum junction temperature rating of built-in power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average
junction temperature should be limited to Tj(Ave)≤125°C (@Tc≤100°C).
CONTROL (PROTECTION) PART
Symbol
V
D
V
DB
V
IN
V
FO
I
FO
V
SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V
P1
-V
PC
, V
N1
-V
NC
Applied between V
UFB
-V
UFS
, V
VFB
-V
VFS
, V
WFB
-V
WFS
Applied between U
P
, V
P
, W
P
-V
PC
, U
N
, V
N
, W
N
-V
NC
Applied between F
O
-V
NC
Sink current at F
O
terminal
Applied between CIN-V
NC
Ratings
20
20
-0.5~V
D
+0.5
-0.5~V
D
+0.5
1
-0.5~V
D
+0.5
Unit
V
V
V
V
mA
V
TOTAL SYSTEM
Symbol
V
CC(PROT)
T
C
T
stg
V
iso
Parameter
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
Condition
V
D
= 13.5~16.5V, Inverter Part
T
j
= 125°C, non-repetitive, less than 2μs
Measurement point of Tc is provided in Fig.1
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
Ratings
400
-20~+100
-40~+125
1500
Unit
V
°C
°C
V
rms
Fig. 1: T
C
MEASUREMENT POINT
Control terminals
DIPIPM
11.6mm
3mm
IGBT chip position
Tc point
Heat sink side
Power terminals
THERMAL RESISTANCE
Symbol
R
th(j-c)Q
R
th(j-c)F
Parameter
Junction to case thermal
resistance
(Note 2)
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Min.
-
-
Limits
Typ.
-
-
Max.
3.0
3.9
Unit
K/W
K/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : November 2011
2
< Dual-In-Line Package Intelligent Power Module >
PS219B4-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
C(on)
t
off
t
C(off)
t
rr
I
CES
Parameter
Collector-emitter saturation
voltage
FWDi forward voltage
Condition
V
D
=V
DB
= 15V, V
IN
= 5V, I
C
= 15A
V
IN
= 0V, -I
C
= 15A
V
CC
= 300V, V
D
= V
DB
= 15V
I
C
= 15A, T
j
= 125°C, V
IN
= 0↔5V
Inductive Load (upper-lower arm)
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
-
-
-
0.85
-
-
-
-
-
-
Limits
Typ.
1.50
1.60
1.70
1.45
0.45
1.50
0.35
0.30
-
-
Limits
Typ.
-
-
-
-
0.48
10.0
10.0
-
-
2.77
1.13
120
10
-
-
-
1.00
2.10
1.30
0.65
1.7
100
Max.
2.00
2.10
2.20
2.05
0.70
2.10
0.60
-
1
10
Unit
V
V
μs
μs
μs
μs
μs
mA
Switching times
Collector-emitter cut-off
current
V
CE
=V
CES
CONTROL (PROTECTION) PART
Symbol
I
D
Circuit current
I
DB
V
SC(ref)
UV
DBt
UV
DBr
UV
Dt
UV
Dr
V
OT
OT
t
OT
rh
V
FOH
V
FOL
t
FO
I
IN
V
th(on)
V
th(off)
V
th(hys)
V
F
R
Short circuit trip level
P-side Control supply
under-voltage protection(UV)
N-side Control supply
under-voltage protection(UV)
Temperature Output
(-S/-AS/-CS only)
Parameter
Total of V
P1
-V
NC
, V
N1
-V
NC
Each part of V
UFB
-U,
V
VFB
-V, V
WFB
-W
V
D
= 15V
T
j
≤125°C
Condition
V
D
=15V, V
IN
=0V
V
D
=15V, V
IN
=5V
V
D
=V
DB
=15V, V
IN
=0V
V
D
=V
DB
=15V, V
IN
=5V
(Note 3)
Trip level
Reset level
Trip level
Reset level
Overt temperature protection
(OT, -ST/-AST/-CST only) (Note5)
Fault output voltage
Fault output pulse width
Input current
ON threshold voltage
OFF threshold voltage
ON/OFF threshold
hysteresis voltage
Bootstrap Di forward voltage
LVIC Temperature=90C
LVIC Temperature=25C
V
D
= 15V
Trip level
Detect LVIC temperature
Hysteresis of trip-reset
V
SC
= 0V, F
O
terminal pulled up to 5V by 10kΩ
V
SC
= 1V, I
FO
= 1mA
Pull down R=5kΩ
(Note 4)
(Note 6)
V
IN
= 5V
Applied between U
P
, V
P
, W
P
, U
N
, V
N
, W
N
-V
NC
I
F
=10mA including voltage drop by limiting resistor
(Note 7)
Min.
-
-
-
-
0.43
7.0
7.0
10.3
10.8
2.63
0.88
100
-
4.9
-
20
0.70
-
0.80
0.35
Max.
2.80
2.80
0.10
0.10
0.53
12.0
12.0
12.5
13.0
2.91
1.39
140
-
-
0.95
-
1.50
2.60
-
-
2.3
120
Unit
mA
V
V
V
V
V
V
V
°C
°C
V
V
μs
mA
V
V
Ω
Built-in limiting resistance
Included in bootstrap Di
1.1
80
Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.
Note
4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. V
OT
output characteristics is described in Fig. 3.
5 : When the LVIC temperature exceeds OT trip temperature level(OT
t
), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed
loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150C).
6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed
width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)
7 : The characteristics of bootstrap Di is described in Fig.2.
Fig. 2 Characteristics of bootstrap Di V
F
-I
F
curve (@Ta=25C) including voltage drop by limiting resistor (Right chart is enlarged chart.)
160
140
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
F
[V]
30
25
I
F
[mA]
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
V
F
[V]
2.5
3.0
3.5
Publication Date : November 2011
3
I
F
[mA]
< Dual-In-Line Package Intelligent Power Module >
PS219B4-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
Fig. 3 Temperature of LVIC vs. V
OT
output characteristics
4.0
3.8
3.6
Max.
3.4
Typ.
Min.
3.2
3.0
V
OT
output (V)
_
2.91
2.8
2.77
2.6
2.63
2.4
2.2
2.0
1.8
1.6
60
70
80
90
LVIC temperature (°C)
100
110
120
Fig. 4 V
OT
output circuit
Inside LVIC
of DIPIPM
Temperature
Signal
V
OT
Ref
V
NC
5kΩ
MCU
(1) It is recommended to insert 5kΩ or more (5.1kΩ is recommended) pull down resistor for getting linear output characteristics at low
temperature below room temperature. When the pull down resistor is inserted between V
OT
and V
NC
(control GND), the extra circuit
current, which is calculated approximately by V
OT
output voltage divided by pull down resistance, flows as LVIC circuit current
continuously. In the case of using V
OT
for detecting high temperature over room temperature only, it is unnecessary to insert the pull
down resistor.
(2) In the case of using V
OT
with low voltage controller like 3.3V MCU, V
OT
output might exceed control supply voltage 3.3V when
temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di between control supply of
the controller and V
OT
output for preventing over voltage destruction.
(3) In the case of not using V
OT
, leave V
OT
output NC (No Connection).
Refer the application note for Super Mini DIPIPM Ver.5 series about the usage of V
OT
.
Publication Date : November 2011
4
< Dual-In-Line Package Intelligent Power Module >
PS219B4-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Mounting torque
Terminal pulling strength
Terminal bending strength
Weight
Heat-sink flatness
Note 8: Plain washers (ISO 7089~7094) are recommended.
Note 9: Measurement point of heat sink flatness
(Note 9)
Condition
Mounting screw : M3
(Note 8)
Control terminal: Load 4.9N
Power terminal: Load 9.8N
Control terminal: Load 2.45N
Power terminal: Load 4.9N
90deg. bend
Recommended 0.69N・m
EIAJ-ED-4701
EIAJ-ED-4701
Min.
0.59
10
2
-
-50
Limits
Typ.
0.69
-
-
8.5
-
Max.
0.78
-
-
-
100
Unit
N・m
s
times
g
μm
+
-
Measurement position
17.5mm
4.6mm
Heat sink side
+
Heat sink side
-
RECOMMENDED OPERATION CONDITIONS
Symbol
V
CC
V
D
V
DB
ΔV
D
,
ΔV
DB
t
dead
f
PWM
I
O
Parameter
Supply voltage
Control supply voltage
Control supply voltage
Control supply variation
Arm shoot-through blocking time
PWM input frequency
Allowable r.m.s. current
Condition
Applied between P-NU, NV, NW
Applied between V
P1
-V
PC
, V
N1
-V
NC
Applied between V
UFB
-V
UFS
, V
VFB
-V
VFS
, V
WFB
-V
WFS
For each input signal
T
C
≤
100°C, T
j
≤
125°C
V
CC
= 300V, V
D
= 15V, P.F = 0.8,
Sinusoidal PWM
T
C
≤
100°C, T
j
≤
125°C
(Note10)
Min.
0
13.5
13.0
-1
1.0
-
-
-
0.7
0.7
-5.0
-20
Limits
Typ.
300
15.0
15.0
-
-
-
-
-
-
-
-
-
Max.
400
16.5
18.5
+1
-
20
8.0
5.0
-
-
+5.0
+125
Unit
V
V
V
V/μs
μs
kHz
Arms
μs
V
°C
f
PWM
= 5kHz
f
PWM
= 15kHz
(Note 11)
PWIN(on)
Minimum input pulse width
PWIN(off)
V
NC
V
NC
variation
T
j
Junction temperature
Between V
NC
-NU, NV, NW (including surge)
Note 10: Allowable r.m.s. current depends on the actual application conditions.
11: DIPIPM might not make response if the input signal pulse width is less than PWIN(on), PWIN(off).
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