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1.5KE520-G

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE
Categorysemiconductor    Discrete semiconductor   
File Size104KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Download Datasheet View All

1.5KE520-G Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE

1500W Transient Voltage Suppressor
1.5KE-G Series
Stand-off Voltage: 6.8 ~ 600V
Power Dissipation: 1500 Watts
RoHS Device
Features
-Glass passivated chip.
-Low leakage.
-1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle): 0.01%.
-Uni and Bidirectional unit.
-Excellent clamping capability.
-Very fast response time.
0.375(9.53)
0.285(7.24)
1.000(25.40) Min.
DO-201
Mechanical Data
-Case: Molded plastic DO-201
-Epoxy: UL 94V-0 rate flame retardant
-Terminals: Axial leads, solderable per
MIL-STD-202, Method 208 guranteed
-Polarity: Color band denotes cathode
end except Bipolar
-Mounting position: Any
-Approx. weight: 0.844 grams
0.209(5.30) DIA.
0.189(4.79) DIA.
1.000(25.40) Min.
0.042(1.07)
DIA.
0.038(0.97)
DIA.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
(TA=25°C unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000
μ
s
waveform (Note 1)
Peak pulse current with a 10/1000
μs
waveform
(Note 1)
Power dissipation on infinite heatsink at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only
(JEDEC method) (Note 2)
Maximum instantaneous forward voltage at
100 A for unidirectional only(Note 3)
Operating junction and storage
temperature range
Symbol
P
PP
Value
1500
Unit
W
I
PP
P
D
See Next Table
6.5
A
W
I
FSM
200
A
V
F
3.5/5.0
V
T
J
, T
STG
-55 to +150
°C
NTOES:
(1) Non-repetitive current pulse, per fig.5 and derated above T
A
=25°C per fig.1
(2) Measured on 8.3ms single half sine-wave or equivalent square wave, equare wave, duty cycle=4 pulses per minute maximum
(3) V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:B
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