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VSIB660

Description
2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

VSIB660 Overview

2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

VSIB660 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PSFM-T4
Contacts4
Manufacturer packaging codeCASE GSIB-5S
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current180 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
New Product
VSIB620 thru VSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
6.0 A
200 V to 800 V
180 A
10 µA
0.95 V
150 °C
~
~
~
~
Case Style GSIB-5S
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
MECHANICAL DATA
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 100 °C
T
A
= 25 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
VSIB620
200
140
200
VSIB640
400
280
400
6.0
(1)
2.8
(2)
180
120
- 55 to + 150
VSIB660
600
420
600
VSIB680
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave superimposed
on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 84656
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

VSIB660 Related Products

VSIB660 VSIB620 VSIB620_08 VSIB640 VSIB660-E3-45 VSIB680
Description 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible - incompatible - incompatible
package instruction R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 - R-PSFM-T4
Contacts 4 4 - 4 - 4
Manufacturer packaging code CASE GSIB-5S CASE GSIB-5S - CASE GSIB-5S - CASE GSIB-5S
Reach Compliance Code unknow unknow - unknow - unknow
Other features UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED - UL RECOGNIZED
Shell connection ISOLATED ISOLATED - ISOLATED - ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON - SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 - R-PSFM-T4
JESD-609 code e0 e0 - e0 - e0
Maximum non-repetitive peak forward current 180 A 180 A - 180 A - 180 A
Number of components 4 4 - 4 - 4
Phase 1 1 - 1 - 1
Number of terminals 4 4 - 4 - 4
Maximum operating temperature 150 °C 150 °C - 150 °C - 150 °C
Minimum operating temperature -55 °C -55 °C - -55 °C - -55 °C
Maximum output current 2.8 A 2.8 A - 2.8 A - 2.8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified Not Qualified - Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 600 V 200 V - 400 V - 800 V
surface mount NO NO - NO - NO
Terminal surface TIN LEAD TIN LEAD - TIN LEAD - TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED
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