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EGP50A_11

Description
5 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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EGP50A_11 Overview

5 A, 50 V, SILICON, RECTIFIER DIODE

EGP50A thru EGP50G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
GP20
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
5.0 A
50 V to 400 V
150 A
50 ns
0.95 V, 1.25 V
150 °C
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
GP20, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
L
= 55 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
EGP50A
50
35
50
EGP50B
100
70
100
EGP50C
150
105
150
5
150
- 65 to + 150
EGP50D
200
140
200
EGP50F
300
210
300
EGP50G
400
280
400
UNIT
V
V
V
A
A
°C
Document Number: 88585
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

EGP50A_11 Related Products

EGP50A_11 EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G
Description 5 A, 50 V, SILICON, RECTIFIER DIODE 5 A, 50 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 400 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible
Maker - Vishay Vishay Vishay Vishay - Vishay
Reach Compliance Code - unknown unknow unknow unknown unknow unknow
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 0.95 V 0.95 V 0.95 V 0.95 V 1.3 V 1.3 V
JESD-609 code - e0 e0 e0 e0 e0 e0
Number of components - 1 1 1 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current - 5 A 5 A 5 A 5 A 5 A 5 A
Maximum repetitive peak reverse voltage - 50 V 100 V 150 V 200 V 300 V 400 V
Maximum reverse recovery time - 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount - NO NO NO NO NO NO
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches - 1 - - 1 1 1
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