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BC847PN 7P

Description
Transistor type: 1 NPN, 1 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW Collector-emitter saturation voltage (VCE(sat)@Ic, Ib): 600mV@100mA, 5mA; 650mV@100mA, 5mA DC current gain (hFE@Ic, Vce): 200@2mA, 5V; 220@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@ (Tj)
File Size2MB,5 Pages
ManufacturerCHINA BASE INTERNATIONAL
Download Datasheet Parametric View All

BC847PN 7P Overview

Transistor type: 1 NPN, 1 PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW Collector-emitter saturation voltage (VCE(sat)@Ic, Ib): 600mV@100mA, 5mA; 650mV@100mA, 5mA DC current gain (hFE@Ic, Vce): 200@2mA, 5V; 220@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@ (Tj)

BC847PN 7P Parametric

Parameter NameAttribute value
Transistor type1 NPN, 1 PNP
Collector-emitter breakdown voltage (Vceo)45V
Collector current (Ic)100mA
Power(Pd)200mW
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)600mV@100mA,5mA;650mV@100mA,5mA
DC current gain (hFE@Ic,Vce)200@2mA,5V;220@2mA,5V
Characteristic frequency (fT)100MHz
Operating temperature+150℃@(Tj)
Plastic-Encapsulate Transistors
DUAL TRANSISTOR (NPN+PNP)
FEATURES
Epitaxial Die Construction
Two isolated NPN/PNP
(BC847W+BC857W)
Transistors in one package
MAKING: 7P
MAXIMUM RATINGS TR1 (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
6
0.1
200
150
-55-150
Units
V
V
V
A
mW
SOT-363
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
V
BE(on)
V
BE(on)
C
ob
f
T
NF
Test
conditions
Min
50
45
6
15
15
200
450
0.25
0.6
0.7
0.9
0.58
0.7
0.72
6.0
100
10
V
V
V
V
V
V
pF
MHz
dB
Typ
Max
Unit
V
V
V
nA
nA
I
C
=10μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1μA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=2mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA
V
CE
=5V,I
C
=2mA
V
CE
=5V,I
C
=10mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
C
=10mA,f=100MHz
V
CE
=5V,I
c
=0.2mA,
f=1kHz,Rg=2KΩ,∆f=200Hz
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Noise figure
1
of
5
Copyright
©
All right reserved:
Heyuan China Base Electronics Technology Co., Ltd.
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