®
BAT42
BAT43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic dis-
DO-35
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordware Current
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 10s at 4mm from
Case
T
a
= 25°C
t
p
≤
1s
δ ≤
0.5
t
p
= 10ms
T
l
= 65 °C
Value
30
200
500
4
200
- 65 to +150
- 65 to +125
230
Unit
V
mA
mA
A
mW
°C
°C
°C
THERMAL RESISTANCE
Symbol
R
th(j-a)
Junction-ambient*
Test Conditions
Value
300
Unit
°C/W
* On infinite heatsink with 4mm lead length
October 2001 - Ed: 1C
1/4
BAT42 / BAT43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
Tj = 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
I
R
*
T
j
= 25°C
T
j
= 100°ÉC
Test Conditions
I
R
= 100µA
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
V
R
= 25V
BAT 43
0.26
All Types
BAT 42
Min.
30
1
0.4
0.65
0.33
0.45
0.5
100
µA
Typ.
Max.
Unit
V
V
DYNAMIC CHARACTERISTICS
Symbol
C
trr
h
T
j
= 25°C V
R
= 1V
Tj = 25°C I
F
= 10mA
R
L
= 100Ω
Test Conditions
f = 1MHz
I
R
= 10mA
i
rr
= 1mA
80
Min.
Typ.
7
5
Max.
Unit
pF
ns
%
T
j
= 25°C R
L
= 15KΩ C
L
= 300pF f = 45MHz V
i
= 2V
δ <
2%.
* Pulse test: t
p
≤
300µs
Fig. 1:
Forward current versus forward voltage at
different temperatures (typical values).
Fig. 2:
Forward current versus forward voltage
(typical values).
2/4
®
BAT42 / BAT43
Fig. 3:
Reverse current versus junction tempera-
ture (typical values).
Fig. 4:
Reverse current versus continuous re-
verse voltage.
Fig. 5:
Capacitance C versus reverse applied
voltage V
R
(typical values).
®
3/4
BAT42 / BAT43
PACKAGE MECHANICAL DATA
DO-35
REF.
C
A
C
DIMENSIONS
Millimeters
Min.
Max.
4.50
2.00
O
B
/
Inches
Min.
0.120
0.060
1.102
Max.
0.177
0.079
A
O
D
/
O
D
/
3.05
1.53
28.00
0.458
B
C
D
0.558
0.018
0.022
Cooling method: by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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®
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