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TF2104M-TAH

Description
High voltage 600V, single phase, half-bridge gate driver, pre-driver for MOSFETs or IGBTs
File Size730KB,9 Pages
ManufacturerTFSS
Download Datasheet View All

TF2104M-TAH Overview

High voltage 600V, single phase, half-bridge gate driver, pre-driver for MOSFETs or IGBTs

Advance Info
TF2104M
Half-Bridge Gate Driver
Features
Floating high-side driver in bootstrap operation to 600V
Drives two N-channel MOSFETs or IGBTs in a half bridge
configuration
Designed for enhanced performance in noisy motor
applications
290mA source/600mA sink output current capability
Outputs tolerant to negative transients
Internal dead time to protect MOSFETs
Wide low side gate driver supply voltage: 10V to 20V
Logic input (IN and SD*) 3.3V capability
Schmitt triggered logic inputs
Undervoltage lockout for V
CC
(logic and low side supply)
Extended temperature range: -40°C to +125°C
Description
The TF2104M is a high voltage, high speed gate driver
capable of driving N-channel MOSFETs and IGBTs in a
half bridge configuration. TF Semi’s high voltage process
enables the TF2104M’s high side to switch to 600V in a
bootstrap operation.
The TF2104M logic inputs are compatible with standard
TTL and CMOS levels (down to 3.3V) to interface easily
with controlling devices. The driver outputs feature high
pulse current buffers designed for minimum driver cross
conduction.
The TF2104M is offered in PDIP-8 and SOIC-8(N) packages
and operate over an extended -40 °C to +125 °C temperature
range.
SOIC-8(N)
Applications
Motor Controls
DC-DC Converters
AC-DC Inverters
Motor Drives
PDIP-8
Ordering Information
PART NUMBER PACKAGE
TF2104M-3AS
PDIP-8
SOIC-8(N)
SOIC-8(N)
PACK / Qty
Tube / 50
Tube / 100
T&R / 2500
Y
ear
Y
ear
W
eek
W
eek
MARK
YYWW
TF2104M
Lot ID
YYWW
TF2104M
Lot ID
Typical Application
Up to 600V
TF2104M-TAU
TF2104M-TAH
V
CC
IN
SD*
R4
V
CC
IN
SD*
COM
V
B
HO
TO
LOAD
TF2104M
V
S
LO
www.tfsemi.com
Rev. 1.3
Jul
2019
1

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