BC337/338(NPN)
TO-92 Bipolar Transistors
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
Features
Power dissipation
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
BC337
BC338
V
CEO
Collector-Emitter Voltage
BC337
BC338
V
EBO
I
C
P
D
T
j
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Value
50
30
45
25
5
800
625
150
-55-150
Units
V
V
V
mA
mW
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337
BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
V
CBO
Test
conditions
MIN
50
30
I
C
= 10mA ,
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
I
E
= 10uA, I
C
=0
V
CB
= 45V, I
E
=0
V
CB
= 25V, I
E
=0
V
CE
= 40V, I
B
=0
V
CE
= 20V, I
B
=0
V
EB
= 4 V, I
C
=0
V
CE
=1V, I
C
= 100mA
V
CE
=1V, I
C
= 300mA
I
C
=500mA, I
B
= 50mA
I
C
= 500mA, I
B
=50mA
V
CE
=1V, I
C
= 300mA
V
CE
= 5V, I
C
= 10mA
f =
100MHz
V
CB
=10V,I
E
=0
f=1MHZ
I
B
=0
45
25
5
0.1
0.1
0.2
0.2
0.1
630
250
400
630
0.7
1.2
1.2
210
15
V
V
V
uA
uA
uA
TYP
MAX
UNIT
V
V
I
C
= 100uA, I
E
=0
100
100
160
250
60
V
V
V
MHz
pF
f
T
Cob
Revision:20170701-P1
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