ON Semiconductort
FULL PAKt
High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching
power supplies in a wide range of end use applications. This device
combines the latest state of the art bipolar fabrication techniques to
provide excellent switching, high voltage capability and low
saturation voltage.
BUT11AF
POWER TRANSISTOR
5.0 AMPERES
450 VOLTS
40 WATTS
•
•
•
•
•
•
•
1000 Volt V
CES
Rating
Low Base Drive Requirements
Isolated Overmold Package
Improved System Efficiency
No Isolating Washers Required
Reduced System Cost
High Isolation Voltage Capability (4500 V
RMS
)
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
RMS Isolation Voltage (For 1 sec,
T
A
= 25°C, Rel. Humidity < 30%)
Per Figure 7
Per Figure 8
Per Figure 9
Collector Current — Continuous
Collector Current
— Pulsed (1)
Base Current — Continuous
Base Current
— Pulsed (1)
Total Power Dissipation @ T
C
= 25°C*
Derated above 25°C
Operating and Storage Temperature Range
Symbol
V
CEO(sus)
V
CES
V
EBO
V
ISOL1
V
ISOL2
V
ISOL3
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
450
1000
9.0
4500
3500
2500
5.0
10
2.0
4.0
40
0.32
– 65 to +150
Adc
Adc
Watts
W/°C
°C
V
Unit
Vdc
Vdc
Vdc
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case*
Maximum Lead Temperature for soldering purposes
1/8″ from case for 5 sec.
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),
the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in
.
lbs.
R
θJC
T
L
3.125
260
°C/W
°C
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 4
Publication Order Number:
BUT11AF/D
BUT11AF
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Figures 1 & 2)
(I
C
= 100 mAdc, I
B
= 0, L = 25
µ
H)
Collector Cutoff Current
(V
CE
= 1000 Vdc, V
BE
= 0)
(V
CE
= 1000 Vdc, V
BE
= 0, T
J
= 125
°
C)
Emitter-Base Leakage
(V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(I
C
= 2.5 Adc, I
B
= 0.5 Adc)
Base-Emitter Saturation Voltage
(I
C
= 2.5 Adc, I
B
= 0.5 Adc)
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Insulation Capacitance (Collector to External Heatsink)
SWITCHING CHARACTERISTICS
Inductive Load (Figures 3 & 4)
Storage
Fall Time
Storage
Fall Time
Resistive Load (Figures 5 & 6)
Turn-On Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width = 300
µ
s
, Duty Cycle
≤
2.0%.
I
C
= 2.5 Adc, I
B1
= I
B2
= 0.5 Adc
,
t
on
t
s
t
f
–
–
–
–
–
–
1000
4000
800
ns
I
C
= 2.5 Adc, I
B1
= 0.5 Adc
2 5 Adc
05
T
J
= 100°C
T
J
= 25°C
t
s
t
fi
t
s
t
fi
–
–
–
–
1100
80
1200
140
1400
150
1500
300
ns
Cc-hs
–
15
–
pF
V
CE(sat)
V
BE(sat)
h
FE
–
–
10
–
–
–
–
1.5
1.5
–
–
Vdc
Vdc
–
V
CEO(sus)
I
CES
–
–
I
EBO
–
–
–
–
1.0
2.0
10
mAdc
450
–
–
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
+50 V
250
200
I
C
(mA)
100
0
V
CEO(sus)
MIN
L
V
IN
0
T
V
CE
(V)
t
p
100 - 200
Ω
VERT.
OSCILLOSCOPE
HOR.
OSCILLOSCOPE
1
Ω
Figure 1. Oscilloscope Display for Sustaining Voltage
Figure 2. Test Circuit for V
CEO(sus)
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2
BUT11AF
V
CC
I
B
R
L
V
IN
0
t
p
T
V
CC
= 250 V
V
IN
= -6 to +8 V
t
p
= 20
µs
t
p
= 0.01
T
R
B
T.U.T.
I
C
10%
t
d
t
on
t
s
t
off
t
f
t
90%
90%
10%
t
r
I
B on
t
I
B off
I
C on
Figure 3. Test Circuit Resistive Load
Figure 4. Switching Times Waveforms with
Resistive Load
V
CC
90%
L
C
V
CL
+I
B1
-V
BE
L
B
T.U.T.
I
B
10%
t
r
I
B1
t
I
B2
90%
I
C
10%
t
s
t
off
t
f
I
C on
7Z89211.2
V
CL
= 300 V
V
CC
= 30 V
V
EB
= 5 V
L
B
= 1
µH
V
CL
= 200
µH
Figure 5. Test Circuit Inductive Load
Figure 6. Switching Times Waveforms
with Inductive Load
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3
BUT11AF
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
CLIP
CLIP
0.107″ MIN
0.107″ MIN
HEATSINK
0.110″ MIN
Figure 7. Screw or Clip Mounting Position
for Isolation Test Number 1
HEATSINK
HEATSINK
Figure 8. Clip Mounting Position
for Isolation Test Number 2
Figure 9. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
4-40 SCREW
PLAIN WASHER
CLIP
HEATSINK
COMPRESSION WASHER
NUT
HEATSINK
Figure 10. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in
.
lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in
.
lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in
.
lbs without adversely affecting the package.
However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding
10 in
.
lbs of mounting torque under any mounting conditions.
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4
BUT11AF
PACKAGE DIMENSIONS
TO–220 FULLPAK
CASE 221D–02
ISSUE D
–T–
F
Q
A
1 2 3
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
–B–
C
S
U
H
K
–Y–
G
N
L
D
3 PL
M
J
R
0.25 (0.010)
B
M
Y
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5
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