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MBR10HXXCT_15

Description
Dual Common Cathode High Voltage Schottky Rectifier
File Size151KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MBR10HXXCT_15 Overview

Dual Common Cathode High Voltage Schottky Rectifier

MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MBR10H90CT
MBR10H100CT
PIN 1
PIN 3
PIN 2
CASE
2
1
3
1
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 3
PIN 2
2
3
TO-263AB
K
2
1
MBRB10H90CT
MBRB10H100CT
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters,
and polarity protection application.
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
2x5A
90 V to 100 V
150 A
0.61 V
3.5 μA
175 °C
TO-220AB, ITO-220AB,
TO-263AB
Dual common cathode
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 105 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
V
AC
MBR10H90CT
90
90
90
10
5.0
150
0.5
10 000
-65 to +175
1500
V/μs
°C
V
A
MBR10H100CT
100
100
100
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2.0 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 29-Jul-15
Document Number: 88668
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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