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VB20120S-M3_15

Description
High-Voltage Trench MOS Barrier Schottky Rectifier
File Size82KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

VB20120S-M3_15 Overview

High-Voltage Trench MOS Barrier Schottky Rectifier

VB20120S-M3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
High-Voltage Trench MOS Barrier Schottky Rectifier
®
TMBS
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
A
TO-263AB
K
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
NC
TYPICAL APPLICATIONS
VB20120S
NC
A
K
HEATSINK
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Diode variations
TO-263AB
20 A
120 V
200 A
0.73 V
150 °C
Single die
MECHANICAL DATA
Case:
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
VB20120S
120
20
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
(1)
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 90 V
Reverse current
(2)
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 15-May-13
Document Number: 87983
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
T
A
= 125 °C
T
A
= 25 °C
V
F
SYMBOL
TYP.
0.57
0.71
0.99
0.50
0.61
0.73
10
6
-
14
MAX.
-
-
1.12
-
-
0.81
-
-
300
30
μA
mA
μA
mA
V
UNIT

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