VB20120S-M3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.50 V at I
F
= 5 A
FEATURES
High-Voltage Trench MOS Barrier Schottky Rectifier
®
TMBS
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
A
TO-263AB
K
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
NC
TYPICAL APPLICATIONS
VB20120S
NC
A
K
HEATSINK
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Diode variations
TO-263AB
20 A
120 V
200 A
0.73 V
150 °C
Single die
MECHANICAL DATA
Case:
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
VB20120S
120
20
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
(1)
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 90 V
Reverse current
(2)
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 15-May-13
Document Number: 87983
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
T
A
= 125 °C
T
A
= 25 °C
V
F
SYMBOL
TYP.
0.57
0.71
0.99
0.50
0.61
0.73
10
6
-
14
MAX.
-
-
1.12
-
-
0.81
-
-
300
30
μA
mA
μA
mA
V
UNIT
VB20120S-M3
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JC
VB20120S
2
UNIT
°C/W
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
VB20120S-M3/4W
VB20120S-M3/8W
UNIT WEIGHT (g)
1.38
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
100
20
Instantaneous Forward Current (A)
Resistive or Inductive Load
T
A
= 150 °C
T
A
= 125 °C
10
T
A
= 100 °C
Average Forward Current (A)
15
10
1
T
A
= 25 °C
5
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
175
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
20
18
Instantaneous Reverse Current (mA)
D = 0.5
D = 0.3
D = 0.8
100
T
A
= 150 °C
10
T
A
= 125 °C
Average Power Loss (W)
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
D = t
p
/T
t
p
T
D = 0.2
D = 0.1
D = 1.0
1
T
A
= 100 °C
0.1
0.01
T
A
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 15-May-13
Document Number: 87983
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VB20120S-M3
www.vishay.com
Vishay General Semiconductor
10
10 000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction to Case
1
100
10
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 15-May-13
Document Number: 87983
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000