JMnic
Product Specification
Silicon NPN Power Transistors
2SC2816
DESCRIPTION
・With
TO-220C package
・High
voltage
・High
speed
APPLICATIONS
・For
high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
5
10
2.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2816
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.2A ; R
BE
=∞;L=100mH
400
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2.5A; I
B
=0.5A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2.5A; I
B
=0.5A
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=400V ;I
E
=0
50
I
CEO
Collector cut-off current
V
CE
=350V ; R
BE
=∞
50
μA
h
FE-1
DC current gain
I
C
=2.5 A ; V
CE
=5V
15
h
FE-2
DC current gain
I
C
=5 A ; V
CE
=5V
7
Switching times
μs
t
on
Turn-on time
I
C
=5A; I
B1
=-I
B2
=1A
V
CC
=150V
0.5
t
s
Storage time
1.5
μs
t
f
Fall time
0.5
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2816
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2816
4
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