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SSF1010_15

Description
100V N-Channel MOSFET
File Size1MB,7 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
Download Datasheet View All

SSF1010_15 Overview

100V N-Channel MOSFET

SSF1010
100V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
100V
9.5mohm(typ.)
100A
TO-220
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=1.28mH
Avalanche Current @ L=1.28mH
Operating Junction and Storage Temperature Range
Max.
100
70
400
205
1.3
100
± 20
576
30
-55 to + 175
W
W/°C
V
V
mJ
A
°C
A
Units
www.goodark.com
Page 1 of 7
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