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2SC2830_2014

Description
Silicon NPN Power Transistors
File Size37KB,3 Pages
ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.
Websitehttp://www.jmnic.com/
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2SC2830_2014 Overview

Silicon NPN Power Transistors

JMnic
Product Specification
Silicon NPN Power Transistors
2SC2830
DESCRIPTION
・With
TO-3 package
・High
voltage ,high speed
・Wide
area of safe operation
APPLICATIONS
・For
switching regulator applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
20
200
200
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
℃/W
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