MBR30H90CT, MBR30H100CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
2
1
3
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MBR30H90CT,
MBR30H100CT
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
2 x 15 A
90 V, 100 V
275 A
0.67 V
5.0 μA
175 °C
TO-220AB
Dual common cathode
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
, T
STG
MBR30H90CT
90
90
90
30
15
275
1.0
10 000
-65 to +175
MBR30H100CT
100
100
100
UNIT
V
V
V
A
A
A
V/μs
°C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 μs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 17-Aug-15
Document Number: 89156
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR30H90CT, MBR30H100CT
www.vishay.com
Vishay General Semiconductor
SYMBOL
TEST CONDITIONS
I
F
= 15 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VALUE
0.82
0.67
0.93
0.80
5.0
6.0
μA
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage per diode
V
F (1)
I
F
= 30 A
Maximum reverse current at rated V
R
per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
I
R (2)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
MBR30H90CT
1.9
MBR30H100CT
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
MBR30H100CT-M3/4W
UNIT WEIGHT (g)
1.85
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
35
300
Average Forward Current (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Peak Forward Surge Current (A)
250
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve Per Diode
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 17-Aug-15
Document Number: 89156
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR30H90CT, MBR30H100CT
www.vishay.com
Vishay General Semiconductor
10 000
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 25 °C
Junction Capacitance (pF)
T
J
= 175 °C
1000
100
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10 000
T
J
= 175 °C
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
100
10
1
T
J
= 25 °C
1
0.1
0.01
20
40
60
80
100
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 17-Aug-15
Document Number: 89156
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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