SSF11NS60_15 datasheet, PDF - EEWORLD Datasheet

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SSF11NS60_15: Description600V N-Channel MOSFET; File Size660KB，7 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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SSF11NS60_15 Overview

600V N-Channel MOSFET

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SSF11NS60

600V N-Channel MOSFET

Main Product Characteristics

DSS

(on)

600V

0.36Ω (typ.)

11A

TO-220

Marking and Pin

Assignment

Schematic Diagram

Features and Benefits



High dv/dt and avalanche capabilities

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

Lead free product

Description

The SSF11NS60 series MOSFET is a new technology, which combines an innovative super junction

technology and advance process.

This new technology achieves low R

DS(ON)

, energy saving, high

reliability and uniformity, superior power density and space saving.

Absolute Max Rating

Symbol

@ TC = 25°C

@ TC = 100°C

@TC = 25°C

STG

Parameter

Continuous Drain Current, V

@ 10V①

Continuous Drain Current, V

@ 10V①

Pulsed Drain Current②

Power Dissipation③

Linear Derating Factor

Drain-Source Voltage

Gate-to-Source Voltage

Single Pulse Avalanche Energy @ L=22.5mH

Avalanche Current @ L=22.5mH

Operating Junction and Storage Temperature Range

Max.

162

1.5

600

± 30

281

-55 to +150

W/°C

°C

Units

www.goodark.com

Page 1 of 7

Rev.1.2

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