SSF5NS70G/D/F
700V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
700V
1.23Ω (typ.)
5A
①
TO-251
TO-252
SSF5NS70D
TO-220F
SSF5NS70F
Schematic Diagram
Features and Benefits
Feathers:
SSF5NS70G
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF5NS70G/D/F series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low R
DS(ON)
, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
②
Power Dissipation
③
P
D
@TC = 25°C
Linear Derating Factor
V
DS
V
GS
E
AS
I
AR
T
J
T
STG
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
For TO-251/TO-252 package
For TO-220F package
For TO-251/TO-252 package
For TO-220F package
Max.
5
①
3.1
①
15
50
31.2
0.4
0.25
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 9
Rev.1.3
SSF5NS70G/D/F
700V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJC
Characteristics
Junction-to-case
③
Junction-to-ambient
(t ≤ 10s)
④
For TO-251/TO-252 package
For TO-220F package
Typ.
—
—
—
—
Max.
2.5
4
75
80
Units
℃/W
R
θJA
For TO-251/TO-252 package
For TO-220F package
℃/W
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Min.
700
—
—
2
—
—
—
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
—
—
—
—
—
—
—
—
—
—
unless otherwise specified
Typ.
—
1.23
2.9
—
2.8
—
—
—
—
8.3
2.3
2.6
10.1
18.4
16.8
14.8
272
168
3.14
Max.
—
1.4
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1MHz
ns
V
GS
=10V, V
DS
=380V,
R
GEN
=18Ω,I
D
=4.5A
nC
nA
Units
V
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
=10V,I
D
= 1A
T
J
= 125°C
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125°C
V
DS
= 700V,V
GS
= 0V
T
J
= 125°C
V
GS
=30V
V
GS
= -30V
I
D
= 4A,
V
DS
=100V,
V
GS
= 10V
V
GS(th)
Gate threshold voltage
V
I
DSS
Drain-to-Source leakage current
μA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max.
5
①
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=2.8A, V
GS
=0V
T
J
= 25°C, I
F
= I
S
,
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
—
—
—
—
—
0.84
284
1395
15
1.2
—
—
A
V
nS
nC
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Page 2 of 9
Rev.1.3
SSF5NS70G/D/F
700V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 9
Rev.1.3
SSF5NS70G/D/F
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 9
Rev.1.3
SSF5NS70G/D/F
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 9
Rev.1.3
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