SIHLL110 datasheet, PDF - EEWORLD Datasheet

IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

V

DS

(V)

R

DS(on)

()

Q

g

(Max.) (nC)

Q

gs

(nC)

Q

gd

(nC)

Configuration

V

GS

= 5.0 V

6.1

2.6

3.3

Single

D

FEATURES

100

0.54

•

Surface mount

Available in tape and reel

Dynamic dV/dt rating

Repetitive avalanche rated

Logic-level gate drive

Available

R

DS(on)

specified at V

GS

= 4 V and 5 V

Fast switching

Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

DESCRIPTION

SOT-223

D

S

G

D

Marking code: LB

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

SOT-223

Tube

-

IRLL110PbF

SOT-223

Tape and Reel

SiHLL110TR-GE3

IRLL110TRPbF

a

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

a

Linear Derating Factor

Linear Derating Factor (PCB Mount)

e

Single Pulse Avalanche Energy

b

Repetitive Avalanche

Current

a

T

C

= 25 °C

Mount)

e

T

A

= 25 °C

Repetitive Avalanche Energy

a

Maximum Power Dissipation

Maximum Power Dissipation (PCB

Peak Diode Recovery dV/dt

c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak

Temperature)

d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

DD

= 25 V, starting T

J

= 25 °C, L = 25 mH, R

g

= 25

,

I

AS

= 1.5 A (see fig. 12).

c. I

SD



5.6 A, dI/dt



75 A/μs, V

DD



V

DS

, T

J



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S15-1195-Rev. F, 25-May-15

Document Number: 91320

1

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

E

AS

I

AR

E

AR

P

D

dV/dt

T

J

, T

stg

V

GS

at 5.0 V

T

C

= 25 °C

T

C

= 100 °C

SYMBOL

V

DS

V

GS

I

D

I

DM

LIMIT

100

± 10

1.5

0.93

12

0.025

0.017

50

1.5

0.31

3.1

2.0

5.5

-55 to +150

300

W/°C

mJ

A

mJ

W

V/ns

°C

A

UNIT

V

IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient



(PCB Mount)

a

Maximum Junction-to-Case (Drain)

SYMBOL

R

thJA

R

thJC

TYP.

-

MAX.

60

40

UNIT

°C/W

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS

(T

J

= 25 °C, unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

V

DS

Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

MOSFET symbol

showing the



integral reverse

p - n junction diode

D

SYMBOL

V

DS

V

DS

/T

J

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

TEST CONDITIONS

V

GS

= 0 V, I

D

= 250 μA

Reference to 25 °C, I

D

= 1 mA

V

DS

= V

GS

, I

D

= 250 μA

V

GS

= ± 10 V

V

DS

= 100 V, V

GS

= 0 V

V

DS

= 80 V, V

GS

= 0 V, T

J

= 125 °C

V

GS

= 5.0 V

V

GS

= 4.0 V

I

D

= 0.90 A

b

I

D

= 0.75 A

MIN.

100

-

1.0

-

0.57

-

TYP.

-

0.12

-

250

80

15

-

9.3

47

16

18

4.0

6.0

MAX.

-

2.0

± 100

25

250

0.54

0.76

-

6.1

2.6

3.3

-

UNIT

V

V/°C

V

nA

μA



S

V

DS

= 25 V, I

D

= 0.90 A

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

I

D

= 5.6 A, V

DS

= 80 V,

see fig. 6 and 13

b

pF

V

GS

= 5.0 V

nC

V

DD

= 50 V, I

D

= 5.6 A,

R

g

= 12

,

R

D

= 8.4



Between lead,

6 mm (0.25") from

package and center of

die contact

-

D

ns

-

G

nH

-

S

-

110

0.50

1.5

A

12

2.5

130

0.65

V

ns

μC

G

S

T

J

= 25 °C, I

S

= 1.5 A, V

GS

= 0 V

b

T

J

= 25 °C, I

F

= 5.6 A, dI/dt = 100 A/μs

b

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width



300 μs; duty cycle



2 %.

S15-1195-Rev. F, 25-May-15

Document Number: 91320

2

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLL110, SiHLL110

www.vishay.com

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S15-1195-Rev. F, 25-May-15

Document Number: 91320

3

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S15-1195-Rev. F, 25-May-15

Document Number: 91320

4

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRLL110, SiHLL110

www.vishay.com

Vishay Siliconix

R

D

V

DS

V

GS

R

g

D.U.T.

+

- V

DD

5V

Pulse width

≤

1 µs

Duty factor

≤

0.1 %

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S15-1195-Rev. F, 25-May-15

Document Number: 91320

5

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

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