SUP85N03-3m6P-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
85
d
85
d
120
45
101
78.1
b
3.1
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R
thJA
R
thJC
Limit
40
1.6
Unit
°C/W
Document Number: 65536
S09-2271-Rev. A, 02-Nov-09
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1
SUP85N03-3m6P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
c
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 22 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
Min.
30
1
Typ.
Max.
Unit
2.5
± 250
1
50
250
V
nA
µA
A
50
0.0030
0.0036
110
0.0036
0.0044
Ω
S
3535
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
680
400
67
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
0.3
10.5
12.2
1.4
11
10
35
10
2.8
20
20
53
20
ns
Ω
100
nC
pF
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 10 A, dI/dt = 100 A/µs
I
F
= 10 A, V
GS
= 0 V
0.83
41
2
40
85
120
1.5
62
3
60
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65536
S09-2271-Rev. A, 02-Nov-09
SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10
V
thru 4
V
V
GS
= 3
V
80
R
DS(on)
- On-Resistance (Ω)
0.0040
0.0045
100
I
D
- Drain Current (A)
V
GS
= 4.5
V
0.0035
V
GS
= 10
V
0.0030
60
40
20
0
0.0
0.0025
0.5
1.0
1.5
2.0
0
20
40
60
80
100
V
DS
- Drain-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Output Characteristics
5
0.020
On-Resistance vs. Drain Current
3
R
DS(on)
- On-Resistance (Ω)
4
I
D
- Drain Current (A)
0.016
0.012
2
T
C
= 25 °C
1
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.6
1.2
1.8
2.4
3.0
0.008
T
J
= 150 °C
0.004
T
J
= 25 °C
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Transfer Characteristics
300
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
g
fs
- Transconductance (S)
240
T
C
= - 55 °C
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
=
8 V
4
V
DS
= 24
V
180
T
C
= 25 °C
120
T
C
= 125 °C
60
2
0
0
12
24
36
48
60
0
0
20
40
60
80
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Document Number: 65536
S09-2271-Rev. A, 02-Nov-09
Gate Charge
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3
SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.1
1.8
I
S
- Source Current (A)
10
T
J
= 150 °C
V
GS(th)
(V)
1.5
I
D
= 250
µA
T
J
= 25 °C
1
1.2
0.9
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.6
- 50
- 25
0
25
50
75
100
125
150
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
5000
41
Threshold Voltage
4000
C - Capacitance (pF)
C
iss
V
DS
- Drain-to-Source
Voltage
(V)
39
I
D
= 250
µA
37
3000
2000
C
oss
1000
C
rss
0
0
5
10
15
20
25
30
35
33
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
T
J
- Junction Temperature (°C)
Capacitance
1.8
I
D
= 20 A
R
DS(on)
- On-Resistance
1.5
I
D
- Drain Current (A)
(Normalized)
Drain Source Breakdown vs. Junction Temperature
160
120
Package Limited
80
1.2
0.9
V
GS
= 10
V
40
0.6
- 50
V
GS
= 4.5
V
- 25
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
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Document Number: 65536
S09-2271-Rev. A, 02-Nov-09
SUP85N03-3m6P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited
by
R
DS(on)
*
100
I
D
- Drain Current (A)
100
µA
10
1 ms
10 ms, 100 ms
1 s, 10 s, DC
I
DAV
(A)
10
T
J
= 150 °C
T
J
= 25 °C
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
Limited
10
100
1
10
-5
10
-4
10
-3
10
-2
10
-1
0.01
0.1
1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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