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SIHFU024

Description
Power MOSFET
File Size1MB,11 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet View All

SIHFU024 Overview

Power MOSFET

IRFR024, IRFU024, SiHFR024, SiHFU024
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
25
5.8
11
Single
D
FEATURES
60
0.10
Dynamic dV/dt Rating
Surface Mount (IRFR024, SiHFR024)
Straight Lead (IRFU024, SiHFU024)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
S
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR024-GE3
IRFR024PbF
SiHFR024-E3
DPAK (TO-252)
SiHFR024TR-GE3
IRFR024TRPbF
a
SiHFR024T-E3
a
DPAK (TO-252)
SiHFR024TRL-GE3
-
-
IPAK (TO-251)
SiHFU024-GE3
IRFU024PbF
SiHFU024-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 541 μH, R
g
= 25
,
I
AS
= 14 A (see fig. 12).
c. I
SD
17 A, dI/dt
110 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Mount)
e
Mount)
e
E
AS
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
Single Pulse Avalanche Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 20
14
9.0
56
0.33
0.020
91
42
2.5
5.5
- 55 to + 150
260
W/°C
mJ
W
V/ns
°C
A
UNIT
V
S13-0170-Rev. D, 04-Feb-13
Document Number: 91264
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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