UNISONIC TECHNOLOGIES CO., LTD
MGBR10S45
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
DIODE
1
TO-220-2
1
TO-252
The UTC
MGBR10S45
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed, etc.
FEATURES
1
TO-252D
1
* Super low forward voltage drop
* High switching speed
TO-277
SYMBOL
TO-220-2
TO-252/TO-277
ORDERING INFORMATION
Pin Assignment
1
2
3
K
A
-
A
K
A
A
K
A
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
MGBR10S45L-TA2-T
MGBR10S45G-TA2-T
TO-220-2
MGBR10S45L-TN3-R
MGBR10S45G-TN3-R
TO-252
MGBR10S45L-T27-R
MGBR10S45G-T27-R
TO-277
Note: Pin Assignment: A: Anode K: Common Cathode
MARKING
TO-220-2 / TO-252 / TO-252D
TO-277
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R601-115.D
MGBR10S45
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
DIODE
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
45
V
Working Peak Reverse Voltage
V
RWM
45
V
Peak Repetitive Reverse Voltage
V
RRM
45
V
RMS Reverse Voltage
V
R(RMS)
32
V
Average Rectified Output Current
T
C
=140°C
I
O
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
150
A
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TO-220-2
TO-252
TO-252D
TO-277
TO-220-2
TO-252
TO-252D
TO-277
θ
JA
RATINGS
60
110
73 (Note 3)
2
θ
JC
2.5
13 (Note 3)
°C/W
UNIT
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
A
=25°C,
unless otherwise specified.)
SYMBOL
V
(BR)R
MIN
45
TYP MAX UNIT
V
0.48
V
0.43
V
50
500
μA
12
40
mA
PARAMETER
Reverse Breakdown Voltage (Note 1)
TEST CONDITIONS
I
R
=0.45mA
I
F
=10A, T
J
=25°C
Forward Voltage Drop
V
FM
I
F
=10A, T
J
=125°C
V
R
=45V, T
J
=25°C
Leakage Current (Note 1)
I
RM
V
R
=45V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100cm
2
copper pad area.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-115.D
MGBR10S45
TYPICAL CHARACTERISTICS
DIODE
100
10
IF (A)
1
25℃ VF均值
125℃ VF均值
0.1
0
0.1
0.2
0.3
VF (V)
0.4
0.5
0.6
Forward Derating Curve
Typical Reverse Characteristics
1E-1
Instantaneous Reverse Current (A)
1E-2
1E-3
1E-4
1E-5
1E-6
1E-7
V
R
=45V
25
50
75
100
125
150
16
Average Rectified Current (A)
14
12
10
8
6
4
2
0
0
25
50
75
100 125 150 175
Case Temperature (°C)
Case Temperature (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-115.D
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