UNISONIC TECHNOLOGIES CO., LTD
MGBR20L50
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC
MGBR20L50
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high switching speed etc.
The UTC
MGBR20L50
suitable for supply applications.
FEATURES
* Low forward voltage drop
* High switching speed
SYMBOL
TO-220-2 / DFN-8(5×6)
TO-277
ORDERING INFORMATION
Package
TO-220-2
TO-277
DFN-8(5×6)
1
K
A
A
Pin Assignment
2 3 4 5 6 7 8
A - - - - - -
K A - - - - -
A A NC K K K K
Packing
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
MGBR20L50L-TA2-T
MGBR20L50G-TA2-T
MGBR20L50L-T27-T
MGBR20L50G-T27-T
-
MGBR20L50G-K08-5060-R
Note: Pin Assignment: A: Anode
K: Cathode
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R601-129.c
MGBR20L50
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage
V
RM
50
V
Working Peak Reverse Voltage
V
RWM
50
V
Peak Repetitive Reverse Voltage
V
RRM
50
V
Average Rectified Forward Current
I
O
20
A
(Rated VR-20Khz Square Wave) - 50% Duty Cycle
Peak Forward Surge Current - 1/2 60hz
I
FSM
250
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)
I
RRM
2
A
Maximum Rate of Voltage Change ( at Rated V
R
)
dv/dt
10000
V/μS
Operating Junction Temperature
T
J
-65~+150
°C
Storage Junction Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-220-2
TO-277
DFN-8(5×6)
θ
JA
RATINGS
60
73 (Note 3)
72
UNIT
°C/W
Junction to Ambient
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
SYMBOL
V
(BR)R
MIN
50
TYP MAX UNIT
V
0.63
V
0.58
V
300 µA
100 mA
TEST CONDITIONS
I
R
=0.50mA
I
F
=20A, T
J
=25°C
Forward Voltage
V
FM
I
F
=20A, T
J
=125°C
V
R
=50V, T
J
=25°C
Reverse Current (Note 1)
I
RM
V
R
=50V, T
J
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100 cm
2
copper pad area.
PARAMETER
Reverse Breakdown Voltage (Note 1)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MGBR20L50
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-129.c
Microcontroller MCU
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