c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
C
= 25 °C.
g. Package limited.
Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA04DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A, V
GS
½0
V
0.73
36
24
16
20
T
C
= 25 °C
40
80
1.1
70
48
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
3595
1040
79
0.022
51
22.5
8.6
4
30.5
1.25
24
17
25
10
12
10
30
8
2.5
48
34
50
20
24
20
60
16
ns
0.044
77
34
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= + 20 V, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 15 A
V
GS
½4.5
V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
40
0.0018
0.0025
105
0.00215
0.0031
1.1
30
14
- 5.5
2.2
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA04DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 V thru 4 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
48
V
GS
= 3 V
32
6
T
C
= 25
°C
4
16
V
GS
= 2 V
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
2
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0
0.0
1.0
2.0
3.0
4.0
V
GS
- Gate-to-Source Voltage (V)
5.0
Output Characteristics
0.0040
4000
C
iss
0.0034
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.0028
C - Capacitance (pF)
3200
C
oss
Transfer Characteristics
2400
0.0022
V
GS
= 10 V
0.0016
1600
800
C
rss
0.0010
0
10
20
30
I
D
- Drain Current (A)
40
50
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current and Gate Voltage
1.7
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
10
I
D
= 15 A
1.5
R
DS(on)
- On-Resistance
(Normalized)
8
V
DS
= 15 V
6
V
DS
= 10 V
4
V
GS
= 10 V
1.3
V
DS
= 20 V
1.1
V
GS
= 4.5 V
2
0.9
0
0
11
22
33
44
Q
g
- Total Gate Charge (nC)
55
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
°
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA04DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.015
10
I
S
- Source Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.012
I
D
= 15 A
0.009
0.1
0.006
T
J
= 125
°C
0.01
0.003
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.2
80
V
GS(th)
Variance (V)
0
Power (W)
60
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.6
40
20
- 0.8
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
Limited by R
DS(on)
*
1
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
100
10 ms
0.1
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA04DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
130
104
I
D
- Drain Current (A)
78
Limited by Package
52
26
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
Power (W)
26
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
39
1.2
0.8
13
0.4
0
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63709
S12-0309-Rev. A, 13-Feb-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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