d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR788DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.47
23
10.5
9
14
T
C
= 25 °C
60
100
0.60
45
21
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2873
555
246
50
24
6.8
7.8
0.9
21
15
28
10
9
11
29
9
1.8
40
30
55
20
18
22
55
18
ns
75
36
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 20 A
30
0.0027
0.0033
85
0.0034
0.0043
0.03
2
30
1
2.5
± 100
0.20
20
V
nA
mA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR788DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
60
V
GS
= 3 V
40
6
4
T
C
= 25
°C
20
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
2
T
C
= 125
°C
0
0
1
2
3
T
C
= - 55
°C
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0040
3700
Transfer Characteristics
0.0036
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
C - Capacitance (pF)
2960
C
iss
0.0032
2220
0.0028
V
GS
= 10 V
0.0024
1480
C
oss
740
C
rss
0.0020
0
0
20
40
60
80
100
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.8
I
D
= 20 A
1.6
V
GS
= 10 V
8
V
DS
= 15 V
6
V
DS
= 20 V
4
V
DS
= 10 V
1.4
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
11
22
33
Q
g
- Total Gate Charge (nC)
44
55
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR788DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
T
J
= 150
°C
10
I
S
- Source Current (A)
0.010
I
D
= 20 A
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
0.008
1
0.006
T
J
= 125
°C
0.004
T
J
= 25
°C
0.002
0.1
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
2
V
SD
- Source-to-Drain Voltage (V)
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
10
-1
200
On-Resistance vs. Gate-to-Source Voltage
10
-2
I
R
- Reverse Current (A)
30 V
160
20 V
10
-4
10 V
10
-5
Power (W)
75
100
125
150
10
-3
120
80
40
10
-6
0
25
50
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
I
DM
Limited
10
I
D
- Drain Current (A)
I
D
Limited
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1s
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiR788DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
I
D
- Drain Current (A)
Package Limited
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
60
2.5
48
2.0
Power (W)
Power (W)
36
1.5
24
1.0
12
0.5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63659
S12-0808-Rev. A, 16-Apr-12
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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