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CBR6A-080

Description
2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CBR6A-080 Overview

2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

CBR6A-080 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage850 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-W4
JESD-609 codee0
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Bridge Rectifiers, Controlled Avalanche*
Single Phase, Full Wave
1.5 to 35 Amperes
200 to 800 Volts
IO (AMPS)
@TA ( C)
@TC ( C)
IFSM (AMPS)
60
o
o
1.5
50
2.0
55
3.0
2.0 @ 25
3.0 @ 50
50
6.0
50
100
150
10
100
150
CASE
VRRM (VOLTS)
200
400
600
800
VF MAX @ IF
IR MAX @ VRRM
CASE A
CASE C
CASE CM
CBR1A-020
CBR1A-040
CBR1A-060
CBR1A-080
1.0V @ 1.0A
10µA
CBR2A-020
CBR2A-040
CBR2A-060
CBR2A-080
1.1V @ 2.0A
10µA
CBR3A-P020
CBR3A-P040
CBR3A-P060
CBR3A-P080
1.1V @ 1.5A
10µA
CBR6A-020
CBR6A-040
CBR6A-060
CBR6A-080
1.1V @ 3.0A
10µA
CBR10A-J020
CBR10A-J040
CBR10A-J060
CBR10A-J080
1.2V @ 5.0A
10µA
*AVALANCHE BREAKDOWN VOLTAGE
VRRM
200V
400V
600V
800V
MIN
250
450
650
850
175
w w w. c e n t r a l s e m i . c o m
MAX
700
900
1100
1300
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