• Smart Phones, Tablet PCs, Portable Media Players
D
1
D
2
Ordering Information:
SiA920DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
1
N-Channel MOSFET
G
2
N-Channel MOSFET
Marking Code
CHX
Part # code
XXX
Lot Traceability
and Date code
S
1
S
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
8
±5
4.5
a
4.5
a
4.5
a, b, c
4.5
a, b, c
20
4.5
a
1.6
b, c
7.8
5
1.9
b, c
1.2
b, c
- 55 to 150
260
Unit
V
A
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t
5s
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
52
12.5
Maximum
65
16
Unit
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
½4.5
V, I
D
= 5.3 A
V
GS
½2.5
V, I
D
= 4.9 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
½1.8
V, I
D
= 4.6 A
V
GS
½1.5
V, I
D
= 1.5 A
V
GS
½1.2
V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5.5 A, V
GS
½0
V
0.8
15
5
7.8
7.2
T
C
= 25 °C
4.5
20
1.2
30
10
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.9
I
D
5.5 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.8
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 6.9 A
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
470
175
85
4.8
0.63
0.6
4
5
12
20
7
8
10
25
40
15
ns
7.5
nC
pF
g
fs
V
DS
= 10 V, I
D
= 5.3 A
10
0.022
0.025
0.029
0.035
0.050
28
0.027
0.031
0.036
0.047
0.110
S
0.35
8
11
- 2.3
0.7
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 2 V
16
I
D
- Drain Current (A)
V
GS
= 1.5 V
I
D
- Drain Current (A)
8
10
12
6
T
C
= 25
°C
4
T
C
= 125
°C
2
T
C
= - 55
°C
0
8
4
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
V
DS
- Drain-to-Source Voltage (V)
2.0
0.0
0.3
0.6
0.9
1.2
V
GS
- Gate-to-Source Voltage (V)
1.5
Output Characteristics
Transfer Characteristics
0.10
V
GS
= 1.2 V
800
0.08
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.5 V
C - Capacitance (pF)
600
C
iss
400
0.06
0.04
V
GS
= 1.8 V
V
GS
= 2.5 V
200
C
oss
C
rss
0.02
V
GS
= 4.5 V
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
0
0
4
6
V
DS
- Drain-to-Source Voltage (V)
2
8
On-Resistance vs. Drain Current and Gate Voltage
5
V
DS
= 3 V
R
DS(on)
- On-Resistance (Normalized)
1.5
Capacitance
I
D
= 6.9 A
V
GS
- Gate-to-Source Voltage (V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
4
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 5.3 A
V
GS
= 1.5 V; I
D
= 1.5 A
3
V
DS
= 6 V
V
DS
= 9.6 V
2
V
GS
= 1.2 V; I
D
= 0.5 A
1
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
5
6
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 5.3 A
R
DS(on)
- On-Resistance (Ω)
0.06
I
S
- Source Current (A)
10
T
J
= 150
°C
0.04
T
J
= 125
°C
1
T
J
= 25
°C
0.02
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.00
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
20
0.7
15
0.6
0.5
Power (W)
125
150
V
GS(th)
(V)
I
D
= 250 μA
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100
μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
T
A
= 25
°C
0.01
0.1
BVDSS Limited
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
8
12
I
D
- Drain Current (A)
9
Power Dissipation (W)
Package Limited
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
6
4
6
2
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63299
S11-1381-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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