UNISONIC TECHNOLOGIES CO., LTD
UTT50P06
-50A, -60V P-CHANNEL (D-S)
POWER MOSFET
1
Power MOSFET
DESCRIPTION
TO-220
The UTC
UTT50P06
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance, and it can also withstand
high energy in the avalanche.
This UTC
UTT50P06
is suitable for load switch, etc.
1
TO-262
FEATURES
1
* V
DS
= -60V
* I
D
= -50A
* R
DS(ON)
=0.012Ω @ V
GS
=-10V, I
D
=-17A
* High Switching Speed
TO-252
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-252
TO-252
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
Ordering Number
Lead Free
Halogen Free
UTT50P06L-TA3-T
UTT50P06G-TA3-T
UTT50P06L-TN3-T
UTT50P06G-TN3-T
UTT50P06L-TN3-R
UTT50P06G-TN3-R
UTT50P06L-T2Q-R
UTT50P06G-T2Q-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-596.C
UTT50P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
DSS
V
GSS
RATINGS
UNIT
-60
V
±20
V
T
C
=25°C
-50 (Note 5)
A
Continuous (T
J
=175°C)
I
D
Drain Current
T
C
=125°C
-27.5
A
Pulsed
I
DM
-80
A
Avalanche Current
I
AR
-50
A
Single Pulse Avalanche Energy (Note 2)
L=0.1mH
E
AS
125
mJ
113 (Note 4)
W
TO-220
T
C
=25°C
TO-252
50
W
TO-262
113
W
Power Dissipation
P
D
TO-220
2.5 (Note 3, 4)
W
T
A
=25°C
TO-252
1.13
W
TO-262
2.5
W
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Duty cycle≤1%.
3. When Mounted on 1" square PCB (FR-4 material).
4. See SOA curve for voltage derating.
5. Package limited.
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TO-220
TO-252
TO-262
TO-220
TO-252
TO-262
θ
JA
RATINGS
50
110
50
1.1
2.5
1.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θ
JC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-596.C
UTT50P06
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=-60V, V
GS
=0V
V
DS
=-60V, V
GS
=0V, T
J
=125°C
V
DS
=-60V, V
GS
=0V, T
J
=150°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
=-10V, I
D
=-17A
V
GS
=-10V, I
D
=-50A, T
J
=125°C
V
GS
=-10V, I
D
=-50A, T
J
=150°C
V
GS
=-4.5V, I
D
=-14A
V
DS
=-15V, I
D
=-17A
V
GS
=-10V, V
DS
=-5V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Power MOSFET
MIN
-60
-1
TYP
MAX UNIT
V
V
µA
nA
nA
-3
-1
-50
-100
+100
-100
0.012
0.015
0.025
0.028
0.020
Static Drain-Source On-State Resistance
(Note 1)
R
DS(ON)
Ω
S
A
pF
pF
pF
Forward Transconductance (Note 1)
g
FS
On State Drain Current (Note 1)
I
D(ON)
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=-25V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 2, 3)
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
GS
=-10V, V
DS
=-30V, I
D
=-50A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=-30V, R
L
=0.6Ω, I
D
≈
-50A,
Turn-OFF Delay Time
t
D(OFF)
V
GEN
=-10V, R
G
=6Ω
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(T
C
=25°C) (Note 2)
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
F
=-50A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
F
=-50A, dI/dt=100A/µs
Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
61
-50
4950
480
405
110
19
28
15
70
175
175
165
23
105
260
260
-50
-80
-1.6
70
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
-1.0
45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT50P06
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current, -I
D
(µA)
250
200
150
100
50
0
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
0
20
40
60
80
100
Drain-Source Breakdown Voltage, -BV
DSS
(V)
Drain-Source On-State Resistance
Characteristics
Drain Current, -I
D
(µA)
0.4
0.8
2.0 2.4
1.2 1.6
Gate Threshold Voltage, -V
TH
(V)
Drain Current vs. Source to Drain Voltage
60
50
20
16
12
8
4
0
0
Drain Current, -I
D
(A)
V
GS
=-10V, I
D
=-17A
Drain Current, -I
D
(A)
40
30
20
10
0
0
V
GS
=-4.5V, I
D
=-14A
0.2 0.25
0.05
0.1
0.15
Drain to Source Voltage, -V
DS
(V)
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, -V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-596.C
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