UNISONIC TECHNOLOGIES CO., LTD
Preliminary
20N40K-MT
20A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
20N40K-MT
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC
20N40K-MT
is generally applied in high efficiency
switch mode power supplies.
FEATURES
* R
DS(ON)
< 0.22Ω @ V
GS
= 10V, I
D
= 10A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220F2
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
20N40KL-TF2-T
20N40KG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
20N40KL-TF2-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-B17.c
20N40K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
T
C
=25°C
I
D
20
A
Drain Current
Pulsed (Note 2)
I
DM
80
A
Avalanche Current (Note 2)
I
AR
20
A
Avalanche Energy Single Pulsed (Note 3)
E
AS
1000
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T
C
=25°C)
45
W
P
D
Derate above 25°C
0.35
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.01mH, I
AS
= 20A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
20A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.8
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
400
V
0.5
V/°C
10
µA
+100 nA
-100 nA
4.0
0.15 0.22
1170
300
11.9
110
190
372
200
57
15
16
20
80
1.5
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=10A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
Rise Time
t
R
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge at 10V
Q
G(TOT)
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=23A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially Independent of Operating Temperature Typical Characteristics
2.0
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www.unisonic.com.tw
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QW-R502-B17.c
20N40K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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20N40K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B17.c
20N40K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B17.c
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