UNISONIC TECHNOLOGIES CO., LTD
4N65K-MT
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N65K-MT
is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @ V
GS
= 10 V, I
D
= 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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QW-R502-B21.F
4N65K-MT
ORDERING INFORMATION
Ordering Number
Lead Free
4N65KL-TA3-T
4N65KL-TF3-T
4N65KL-TF1-T
4N65KL-TF2-T
4N65KL-TF3T-T
4N65KL-TM3-T
4N65KL-TMS-T
4N65KL-TMS2-T
4N65KL-TMS4-T
4N65KL-TN3-R
4N65KL-TND-R
4N65KL-T2Q-T
Pin Assignment: G: Gate
Halogen Free
4N65KG-TA3-T
4N65KG-TF3-T
4N65KG-TF1-T
4N65KG-TF2-T
4N65KG-TF3T-T
4N65KG-TM3-T
4N65KG-TMS-T
4N65KG-TMS2-T
4N65KG-TMS4-T
4N65KG-TN3-R
4N65KG-TND-R
4N65KG-T2Q-T
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
Tape Reel
Tube
Note:
MARKING
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QW-R502-B21.F
4N65K-MT
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
4.0
A
Drain Current
Pulsed (Note2)
I
DM
16
A
Avalanche Energy
Single Pulsed (Note3)
E
AS
200
mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
TO-220/TO-262
106
W
TO-220F
34
W
TO-220F1/TO-220F2
36
W
Power Dissipation
P
D
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=25mH, I
AS
=4A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL RESISTANCES CHARACTERISTICS
SYMBOL
RATINGS
62.5
θ
JA
110
1.18
3.47
3.67
3.57
2.5
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-262
TO-220F/TO-220F1
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220/TO-262
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
θ
JC
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QW-R502-B21.F
4N65K-MT
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
Forward
I
GSS
Reverse
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
= 0.5A,
Turn-On Rise Time
t
R
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V,I
D
= 1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
V
GS
= 0 V, I
D
= 250μA
650
V
DS
= 650 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
I
D
=250μA, Referenced to 25°C
2.0
0.6
4.0
1.77 2.50
430
60
6
44
50
80
45
17
4.9
3.7
750
90
11
60
100
130
70
20
1.4
4.4
17.6
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QW-R502-B21.F
4N65K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-B21.F
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