UNISONIC TECHNOLOGIES CO., LTD
4N70K-MT
4.4A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N70K-MT
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 3.2Ω @ V
GS
= 10 V, I
D
= 2.2 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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QW-R205-037.C
4N70K-MT
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Ordering Number
Lead Free
Halogen Free
4N70KL-TA3-T
4N70KG-TA3-T
4N70KL-TF3-T
4N70KG-TF3-T
4N70KL-TF1-T
4N70KG-TF1-T
4N70KL-TF2-T
4N70KG-TF2-T
4N70KL-TF3-T
4N70KG-TF3-T
4N70KL-TM3-T
4N70KG-TM3-T
4N70KL-TMS-T
4N70KG-TMS-T
4N70KL-TMS2-T
4N70KG-TMS2-T
4N70KL-TMS4-T
4N70KG-TMS4-T
4N70KL-TN3-R
4N70KG-TN3-R
4N70KL-TND-R
4N70KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Tape Reel
Tape Reel
MARKING
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QW-R205-037.C
4N70K-MT
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Continuous
I
D
4.4
A
Drain Current
Pulsed (Note 2)
I
DM
17.6
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
180
mJ
TO-220
106
W
TO-220F/TO-220F1
36
W
TO-220F2/TO-220F3
P
D
Power Dissipation
TO-251/TO-251S
TO-251S2/TO-251S4
49
W
TO-252/TO-252D
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 22.5mH, I
AS
= 4 A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4.4A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
110
1.18
3.47
θ
JC
3.4
2.55
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
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QW-R205-037.C
4N70K-MT
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN
700
TYP MAX
UNIT
V
μA
nA
V/°С
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 700 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2 A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 30V, I
D
= 0.5A,
Turn-On Rise Time
t
R
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 50V, I
D
= 1.3A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
10
100
-100
0.6
2.0
4.0
3.2
350
55
5
50
40
75
30
14
5
2.5
550
85
10
70
60
90
45
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
1.4
4.4
16
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QW-R205-037.C
4N70K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-037.C
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