UNISONIC TECHNOLOGIES CO., LTD
2N60K-TA
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N60K-TA
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* R
DS(ON)
< 5.0Ω@ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
S: Source
1
G
G
G
G
G
G
G
G
G
Pin Assignment
2
D
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
2N60KL-TA3-T
2N60KG-TA3-T
2N60KL-TF3-T
2N60KG-TF3-T
2N60KL-TF1-T
2N60KG-TF1-T
2N60KL-TF2-T
2N60KG-TF2-T
2N60KL-TF3T-T
2N60KG-TF3T-T
2N60KL-TM3-T
2N60KG-TM3-T
2N60KL-TMS-T
2N60KG-TMS-T
2N60KL-TN3-R
2N60KG-TN3-R
2N60KL-TND-R
2N60KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
2N60KL-TA3-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2, TF3T: TO-220F3, TM3: TO-251
TMS: TO-251S, TN3: TO-252, TND: TO-252D
(3) L: Lead Free, G: Halogen Free and Lead Free
1 of 7
QW-R205-032.B
(2)Package Type
(3)Green Package
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Copyright © 2015 Unisonic Technologies Co., Ltd
2N60K-TA
MARKING
Power MOSFET
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QW-R205-032.B
2N60K-TA
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
Continuous
I
D
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
85
mJ
Avalanche Energy
4.5
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
W
TO-220F/TO-220F1
21
W
TO-220F3
P
D
Power Dissipation
TO-220F2
23
W
TO-251/TO-251S
44
W
TO-252/TO-252D
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=42.5mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
100
2.32
5.95
θ
JC
5.43
2.87
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
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QW-R205-032.B
2N60K-TA
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100
μA
100 nA
-100 nA
V/°С
4.0
5.0
290
45
20
40
50
100
55
13
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0V, I
D
= 250μA
600
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, T
C
=125°С
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f =1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=1.0V,
Gate-Source Charge
Q
GS
I
D
=1.3A (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.4
4.0
205
40
16
23
40
80
40
11
4.4
1.3
1.4
2.0
8.0
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QW-R205-032.B
2N60K-TA
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R205-032.B
Power technology
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