UNISONIC TECHNOLOGIES CO., LTD
2N65K-TA
2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION`
The UTC
2N65K-TA
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 5.2Ω @ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
2N65KL-TA3-T
2N65KL-TF3-T
2N65KL-TF1-T
2N65KL-TF2-T
2N65KL-TF3T-T
2N65KL-TM3-T
2N65KL-TMS-T
2N65KL-TN3-R
2N65KL-TND-R
Pin Assignment: G: Gate
2N65KL-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
Halogen Free
2N65KG-TA3-T
2N65KG-TF3-T
2N65KG-TF1-T
2N65KG-TF2-T
2N65KG-TF3T-T
2N65KG-TM3-T
2N65KG-TMS-T
2N65KG-TN3-R
2N65KG-TND-R
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Note:
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TN3: TO-252, TND: TO-252D
(3) L: Lead Free, G: Halogen Free and Lead Free
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QW-R205-041.A
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Copyright © 2014 Unisonic Technologies Co., Ltd
2N65K-TA
MARKING
Power MOSFET
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QW-R205-041.A
2N65K-TA
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
75
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
TO-220F/TO-220F1
21
TO-220F3
Power Dissipation
P
D
W
TO-220F2
23
TO-251/TO-251S
44
TO-252/TO-252D
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
.
3. L=37.5mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
62.5
θ
JA
100
2.32
5.95
θ
JC
5.43
2.87
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
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QW-R205-041.A
2N65K-TA
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100 nA
-100 nA
V/°С
5.0
5.2
200
40
14
40
30
55
22
10
4
1.2
290
45
20
60
55
70
30
12
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
V
GS
= 0V, I
D
= 250μA
650
V
DS
= 650V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
3.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f =1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=30V, I
D
=0.5A,R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=1.0V, I
D
=1.3A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.4
1.4
2.0
8.0
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QW-R205-041.A
2N65K-TA
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-041.A
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